Searched refs:w_eval_inv_p (Results 1 - 4 of 4) sorted by relevance
| /gem5/ext/mcpat/cacti/ |
| H A D | parameter.h | 191 double w_eval_inv_p; member in class:TechnologyParameter
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| H A D | mat.cc | 1390 Ceq = gate_C(g_tp.w_eval_inv_n + g_tp.w_eval_inv_p, 0, is_dram) +
1410 drain_C_(g_tp.w_eval_inv_p, PCH, 1, 1, g_tp.cell_h_def, is_dram) +
1420 lkgCurrent += cmos_Isub_leakage(g_tp.w_eval_inv_n, g_tp.w_eval_inv_p, 1,
1425 gatelkgCurrent += cmos_Ig_leakage(g_tp.w_eval_inv_n, g_tp.w_eval_inv_p, 1,
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| H A D | parameter.cc | 126 cout << indent_str << "w_eval_inv_p = " << setw(12) << w_eval_inv_p << " um" << endl;
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| H A D | technology.cc | 1737 g_tp.w_eval_inv_p = 100 * g_ip->F_sz_um;//this was 80 micron for the 0.8 micron process
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