Searched refs:w_comp_inv_n3 (Results 1 - 4 of 4) sorted by relevance
| /gem5/ext/mcpat/cacti/ |
| H A D | parameter.h | 190 double w_comp_inv_n3; member in class:TechnologyParameter
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| H A D | mat.cc | 1376 Ceq = gate_C(g_tp.w_comp_inv_n3 + g_tp.w_comp_inv_p3, 0, is_dram) +
1392 drain_C_(g_tp.w_comp_inv_n3, NCH, 1, 1, g_tp.cell_h_def, is_dram);
1398 lkgCurrent += cmos_Isub_leakage(g_tp.w_comp_inv_n3, g_tp.w_comp_inv_p3, 1,
1400 gatelkgCurrent += cmos_Ig_leakage(g_tp.w_comp_inv_n3, g_tp.w_comp_inv_p3,
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| H A D | parameter.cc | 125 cout << indent_str << "w_comp_inv_n3 = " << setw(12) << w_comp_inv_n3 << " um" << endl;
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| H A D | technology.cc | 1736 g_tp.w_comp_inv_n3 = 30 * g_ip->F_sz_um;//this was 24 micron for the 0.8 micron process
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