Searched refs:w_comp_inv_n1 (Results 1 - 4 of 4) sorted by relevance

/gem5/ext/mcpat/cacti/
H A Dparameter.h188 double w_comp_inv_n1; member in class:TechnologyParameter
H A Dparameter.cc123 cout << indent_str << "w_comp_inv_n1 = " << setw(12) << w_comp_inv_n1 << " um" << endl;
H A Dmat.cc1360 drain_C_(g_tp.w_comp_inv_n1, NCH, 1, 1, g_tp.cell_h_def, is_dram);
1369 double lkgCurrent = cmos_Isub_leakage(g_tp.w_comp_inv_n1,
1372 double gatelkgCurrent = cmos_Ig_leakage(g_tp.w_comp_inv_n1,
H A Dtechnology.cc1732 g_tp.w_comp_inv_n1 = 7.5 * g_ip->F_sz_um;//this was 6 micron for the 0.8 micron process

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