Searched refs:dram_wl (Results 1 - 4 of 4) sorted by relevance

/gem5/ext/mcpat/cacti/
H A Dbasic_circuit.cc101 dt = &g_tp.dram_wl; //DRAM wordline transistor
126 dt = &g_tp.dram_wl; //DRAM wordline transistor
153 dt = &g_tp.dram_wl; // DRAM wordline transistor
222 dt = &g_tp.dram_wl; //DRAM wordline transistor
250 dt = &g_tp.dram_wl; //DRAM wordline transistor
267 p_to_n_sizing_ratio = g_tp.dram_wl.n_to_p_eff_curr_drv_ratio;
311 dt = &(g_tp.dram_wl);
329 dt = &(g_tp.dram_wl);
359 dt = &(g_tp.dram_wl);
376 dt = &(g_tp.dram_wl);
[all...]
H A Dparameter.h221 DeviceType dram_wl; // DRAM wordline transistor member in class:TechnologyParameter
256 dram_wl.reset();
H A Dtechnology.cc1665 g_tp.dram_wl.l_phy += curr_alpha * Lphy[dram_cell_tech_flavor];
1666 g_tp.dram_wl.l_elec += curr_alpha * Lelec[dram_cell_tech_flavor];
1667 g_tp.dram_wl.C_g_ideal += curr_alpha * c_g_ideal[dram_cell_tech_flavor];
1668 g_tp.dram_wl.C_fringe += curr_alpha * c_fringe[dram_cell_tech_flavor];
1669 g_tp.dram_wl.C_junc += curr_alpha * c_junc[dram_cell_tech_flavor];
1670 g_tp.dram_wl.C_junc_sidewall = 0.25e-15; // F/micron
1671 g_tp.dram_wl.I_on_n += curr_alpha * I_on_n[dram_cell_tech_flavor];
1672 g_tp.dram_wl.R_nch_on += curr_alpha * Rnchannelon[dram_cell_tech_flavor];
1673 g_tp.dram_wl.R_pch_on += curr_alpha * Rpchannelon[dram_cell_tech_flavor];
1674 g_tp.dram_wl
[all...]
H A Dparameter.cc155 dram_wl.display(indent + 2);

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