mcpat/cacti/technology.cc

95     double nmos_effective_resistance_multiplier;
212             //Note that nmos_effective_resistance_multiplier, n_to_p_eff_curr_drv_ratio and gmp_to_gmn_multiplier values are calculated offline
213             nmos_effective_resistance_multiplier = 1.54;
216             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
282             //Note that nmos_effective_resistance_multiplier, n_to_p_eff_curr_drv_ratio and gmp_to_gmn_multiplier values are calculated offline
283             nmos_effective_resistance_multiplier = 1.54;
286             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
327             nmos_effective_resistance_multiplier = 1.92;
330             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];
371             nmos_effective_resistance_multiplier = 1.77;
374             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];
429                 nmos_effective_resistance_multiplier = 1.65;
432                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
474                 nmos_effective_resistance_multiplier = 1.62;
477                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
533             nmos_effective_resistance_multiplier = 1.50;
536             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];
578             nmos_effective_resistance_multiplier = 1.96;
581             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];
622             nmos_effective_resistance_multiplier = 1.82;
625             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];
680                 nmos_effective_resistance_multiplier = 1.65;
683                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
725                 nmos_effective_resistance_multiplier = 1.69;
728                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
784             nmos_effective_resistance_multiplier = 1.51;
787             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];
830             nmos_effective_resistance_multiplier = 1.99;
833             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];
874             nmos_effective_resistance_multiplier = 1.76;
877             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];
932                 nmos_effective_resistance_multiplier = 1.65;
935                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
977                 nmos_effective_resistance_multiplier = 1.69;
980                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
1036             nmos_effective_resistance_multiplier = 1.49;
1039             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
1082             nmos_effective_resistance_multiplier = 1.99;
1085             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];
1126             nmos_effective_resistance_multiplier = 1.73;
1129             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];
1184                 nmos_effective_resistance_multiplier = 1.65;
1187                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
1229                 nmos_effective_resistance_multiplier = 1.69;
1232                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
1287             nmos_effective_resistance_multiplier = 1.45;
1291             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
1334             nmos_effective_resistance_multiplier = 1.99;
1337             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];//ohm-micron
1378             nmos_effective_resistance_multiplier = 1.73;
1381             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];//ohm-micron
1443                 nmos_effective_resistance_multiplier = 1.69;//Using the value from 32nm.
1447                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp  / I_on_n[3];//ohm-micron
1503             nmos_effective_resistance_multiplier = 1.48;//nmos_effective_resistance_multiplier  is the ratio of Ieff to Idsat where Ieff is the effective NMOS current and Idsat is the saturation current.
1507             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
1566                 nmos_effective_resistance_multiplier = 1.69;//Using the value from 32nm.
1570                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp  / I_on_n[3];//ohm-micron