Lines Matching defs:Lelec
155 double Lelec[NUMBER_TECH_FLAVORS];
201 Lelec[0] = 0.10;//Lelec is the electrical gate-length. micron
271 Lelec[0] = 0.0266;//Lelec is the electrical gate-length. micron
316 Lelec[1] = 0.0486;
360 Lelec[2] = 0.0354;
405 Lelec[3] = 0.0756;
450 Lelec[3] = 0.0576;
522 Lelec[0] = 0.019;
567 Lelec[1] = 0.0298;
611 Lelec[2] = 0.0216;
656 Lelec[3] = 0.0756;
701 Lelec[3] = 0.0426;
771 Lelec[0] = 0.01345;
819 Lelec[1] = 0.0212;
863 Lelec[2] = 0.016;
908 Lelec[3] = 0.0504;// Assume Lelec is 30% lesser than Lphy for DRAM access and wordline transistors.
953 Lelec[3] = 0.0298;
1025 Lelec[0] = 0.01013;
1071 Lelec[1] = 0.0173;
1115 Lelec[2] = 0.01232;
1160 Lelec[3] = 0.0419;//Assume Lelec is 30% lesser than Lphy for DRAM access and wordline transistors.
1205 Lelec[3] = 0.0205;//Assume Lelec is 30% lesser than Lphy for DRAM access and wordline transistors.
1276 Lelec[0] = 0.00468;//Lelec is the electrical gate-length.
1323 Lelec[1] = 0.008;//Lelec is the electrical gate-length.
1367 Lelec[2] = 0.00604;//Lelec is the electrical gate-length.
1417 Lelec[3] = 0.0181;//micron.
1492 Lelec[0] = 0.00315;//Lelec is the electrical gate-length.
1540 Lelec[3] = 0.0181;//micron.
1619 g_tp.peri_global.l_elec += curr_alpha * Lelec[peri_global_tech_type];
1635 g_tp.sram_cell.l_elec += curr_alpha * Lelec[ram_cell_tech_type];
1655 g_tp.dram_acc.l_elec += curr_alpha * Lelec[dram_cell_tech_flavor];
1666 g_tp.dram_wl.l_elec += curr_alpha * Lelec[dram_cell_tech_flavor];
1681 g_tp.cam_cell.l_elec += curr_alpha * Lelec[ram_cell_tech_type];