basic_circuit.cc revision 10234
1/***************************************************************************** 2 * McPAT/CACTI 3 * SOFTWARE LICENSE AGREEMENT 4 * Copyright 2012 Hewlett-Packard Development Company, L.P. 5 * Copyright (c) 2010-2013 Advanced Micro Devices, Inc. 6 * All Rights Reserved 7 * 8 * Redistribution and use in source and binary forms, with or without 9 * modification, are permitted provided that the following conditions are 10 * met: redistributions of source code must retain the above copyright 11 * notice, this list of conditions and the following disclaimer; 12 * redistributions in binary form must reproduce the above copyright 13 * notice, this list of conditions and the following disclaimer in the 14 * documentation and/or other materials provided with the distribution; 15 * neither the name of the copyright holders nor the names of its 16 * contributors may be used to endorse or promote products derived from 17 * this software without specific prior written permission. 18 19 * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS 20 * "AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT 21 * LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR 22 * A PARTICULAR PURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT 23 * OWNER OR CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL, 24 * SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT NOT 25 * LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE, 26 * DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND ON ANY 27 * THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT 28 * (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE 29 * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. 30 * 31 ***************************************************************************/ 32 33 34 35 36#include <cassert> 37#include <cmath> 38#include <iostream> 39 40#include "basic_circuit.h" 41#include "parameter.h" 42 43uint32_t _log2(uint64_t num) { 44 uint32_t log2 = 0; 45 46 if (num == 0) { 47 std::cerr << "log0?" << std::endl; 48 exit(1); 49 } 50 51 while (num > 1) { 52 num = (num >> 1); 53 log2++; 54 } 55 56 return log2; 57} 58 59 60bool is_pow2(int64_t val) { 61 if (val <= 0) { 62 return false; 63 } else if (val == 1) { 64 return true; 65 } else { 66 return (_log2(val) != _log2(val - 1)); 67 } 68} 69 70 71int powers (int base, int n) { 72 int i, p; 73 74 p = 1; 75 for (i = 1; i <= n; ++i) 76 p *= base; 77 return p; 78} 79 80/*----------------------------------------------------------------------*/ 81 82double logtwo (double x) { 83 assert(x > 0); 84 return ((double) (log (x) / log (2.0))); 85} 86 87/*----------------------------------------------------------------------*/ 88 89 90double gate_C( 91 double width, 92 double wirelength, 93 bool _is_dram, 94 bool _is_cell, 95 bool _is_wl_tr) { 96 const TechnologyParameter::DeviceType * dt; 97 98 if (_is_dram && _is_cell) { 99 dt = &g_tp.dram_acc; //DRAM cell access transistor 100 } else if (_is_dram && _is_wl_tr) { 101 dt = &g_tp.dram_wl; //DRAM wordline transistor 102 } else if (!_is_dram && _is_cell) { 103 dt = &g_tp.sram_cell; // SRAM cell access transistor 104 } else { 105 dt = &g_tp.peri_global; 106 } 107 108 return (dt->C_g_ideal + dt->C_overlap + 3*dt->C_fringe)*width + dt->l_phy*Cpolywire; 109} 110 111 112// returns gate capacitance in Farads 113// actually this function is the same as gate_C() now 114double gate_C_pass( 115 double width, // gate width in um (length is Lphy_periph_global) 116 double wirelength, // poly wire length going to gate in lambda 117 bool _is_dram, 118 bool _is_cell, 119 bool _is_wl_tr) { 120 // v5.0 121 const TechnologyParameter::DeviceType * dt; 122 123 if ((_is_dram) && (_is_cell)) { 124 dt = &g_tp.dram_acc; //DRAM cell access transistor 125 } else if ((_is_dram) && (_is_wl_tr)) { 126 dt = &g_tp.dram_wl; //DRAM wordline transistor 127 } else if ((!_is_dram) && _is_cell) { 128 dt = &g_tp.sram_cell; // SRAM cell access transistor 129 } else { 130 dt = &g_tp.peri_global; 131 } 132 133 return (dt->C_g_ideal + dt->C_overlap + 3*dt->C_fringe)*width + dt->l_phy*Cpolywire; 134} 135 136 137 138double drain_C_( 139 double width, 140 int nchannel, 141 int stack, 142 int next_arg_thresh_folding_width_or_height_cell, 143 double fold_dimension, 144 bool _is_dram, 145 bool _is_cell, 146 bool _is_wl_tr) { 147 double w_folded_tr; 148 const TechnologyParameter::DeviceType * dt; 149 150 if ((_is_dram) && (_is_cell)) { 151 dt = &g_tp.dram_acc; // DRAM cell access transistor 152 } else if ((_is_dram) && (_is_wl_tr)) { 153 dt = &g_tp.dram_wl; // DRAM wordline transistor 154 } else if ((!_is_dram) && _is_cell) { 155 dt = &g_tp.sram_cell; // SRAM cell access transistor 156 } else { 157 dt = &g_tp.peri_global; 158 } 159 160 double c_junc_area = dt->C_junc; 161 double c_junc_sidewall = dt->C_junc_sidewall; 162 double c_fringe = 2 * dt->C_fringe; 163 double c_overlap = 2 * dt->C_overlap; 164 double drain_C_metal_connecting_folded_tr = 0; 165 166 // determine the width of the transistor after folding (if it is getting folded) 167 if (next_arg_thresh_folding_width_or_height_cell == 0) { 168 // interpret fold_dimension as the the folding width threshold 169 // i.e. the value of transistor width above which the transistor gets folded 170 w_folded_tr = fold_dimension; 171 } else { // interpret fold_dimension as the height of the cell that this transistor is part of. 172 double h_tr_region = fold_dimension - 2 * g_tp.HPOWERRAIL; 173 // TODO : w_folded_tr must come from Component::compute_gate_area() 174 double ratio_p_to_n = 2.0 / (2.0 + 1.0); 175 if (nchannel) { 176 w_folded_tr = (1 - ratio_p_to_n) * (h_tr_region - g_tp.MIN_GAP_BET_P_AND_N_DIFFS); 177 } else { 178 w_folded_tr = ratio_p_to_n * (h_tr_region - g_tp.MIN_GAP_BET_P_AND_N_DIFFS); 179 } 180 } 181 int num_folded_tr = (int) (ceil(width / w_folded_tr)); 182 183 if (num_folded_tr < 2) { 184 w_folded_tr = width; 185 } 186 187 double total_drain_w = (g_tp.w_poly_contact + 2 * g_tp.spacing_poly_to_contact) + // only for drain 188 (stack - 1) * g_tp.spacing_poly_to_poly; 189 double drain_h_for_sidewall = w_folded_tr; 190 double total_drain_height_for_cap_wrt_gate = w_folded_tr + 2 * w_folded_tr * (stack - 1); 191 if (num_folded_tr > 1) { 192 total_drain_w += (num_folded_tr - 2) * (g_tp.w_poly_contact + 2 * g_tp.spacing_poly_to_contact) + 193 (num_folded_tr - 1) * ((stack - 1) * g_tp.spacing_poly_to_poly); 194 195 if (num_folded_tr % 2 == 0) { 196 drain_h_for_sidewall = 0; 197 } 198 total_drain_height_for_cap_wrt_gate *= num_folded_tr; 199 drain_C_metal_connecting_folded_tr = g_tp.wire_local.C_per_um * total_drain_w; 200 } 201 202 double drain_C_area = c_junc_area * total_drain_w * w_folded_tr; 203 double drain_C_sidewall = c_junc_sidewall * (drain_h_for_sidewall + 2 * total_drain_w); 204 double drain_C_wrt_gate = (c_fringe + c_overlap) * total_drain_height_for_cap_wrt_gate; 205 206 return (drain_C_area + drain_C_sidewall + drain_C_wrt_gate + drain_C_metal_connecting_folded_tr); 207} 208 209 210double tr_R_on( 211 double width, 212 int nchannel, 213 int stack, 214 bool _is_dram, 215 bool _is_cell, 216 bool _is_wl_tr) { 217 const TechnologyParameter::DeviceType * dt; 218 219 if ((_is_dram) && (_is_cell)) { 220 dt = &g_tp.dram_acc; //DRAM cell access transistor 221 } else if ((_is_dram) && (_is_wl_tr)) { 222 dt = &g_tp.dram_wl; //DRAM wordline transistor 223 } else if ((!_is_dram) && _is_cell) { 224 dt = &g_tp.sram_cell; // SRAM cell access transistor 225 } else { 226 dt = &g_tp.peri_global; 227 } 228 229 double restrans = (nchannel) ? dt->R_nch_on : dt->R_pch_on; 230 return (stack * restrans / width); 231} 232 233 234/* This routine operates in reverse: given a resistance, it finds 235 * the transistor width that would have this R. It is used in the 236 * data wordline to estimate the wordline driver size. */ 237 238// returns width in um 239double R_to_w( 240 double res, 241 int nchannel, 242 bool _is_dram, 243 bool _is_cell, 244 bool _is_wl_tr) { 245 const TechnologyParameter::DeviceType * dt; 246 247 if ((_is_dram) && (_is_cell)) { 248 dt = &g_tp.dram_acc; //DRAM cell access transistor 249 } else if ((_is_dram) && (_is_wl_tr)) { 250 dt = &g_tp.dram_wl; //DRAM wordline transistor 251 } else if ((!_is_dram) && (_is_cell)) { 252 dt = &g_tp.sram_cell; // SRAM cell access transistor 253 } else { 254 dt = &g_tp.peri_global; 255 } 256 257 double restrans = (nchannel) ? dt->R_nch_on : dt->R_pch_on; 258 return (restrans / res); 259} 260 261 262double pmos_to_nmos_sz_ratio( 263 bool _is_dram, 264 bool _is_wl_tr) { 265 double p_to_n_sizing_ratio; 266 if ((_is_dram) && (_is_wl_tr)) { //DRAM wordline transistor 267 p_to_n_sizing_ratio = g_tp.dram_wl.n_to_p_eff_curr_drv_ratio; 268 } else { //DRAM or SRAM all other transistors 269 p_to_n_sizing_ratio = g_tp.peri_global.n_to_p_eff_curr_drv_ratio; 270 } 271 return p_to_n_sizing_ratio; 272} 273 274 275// "Timing Models for MOS Circuits" by Mark Horowitz, 1984 276double horowitz( 277 double inputramptime, // input rise time 278 double tf, // time constant of gate 279 double vs1, // threshold voltage 280 double vs2, // threshold voltage 281 int rise) { // whether input rises or fall 282 if (inputramptime == 0 && vs1 == vs2) { 283 return tf * (vs1 < 1 ? -log(vs1) : log(vs1)); 284 } 285 double a, b, td; 286 287 a = inputramptime / tf; 288 if (rise == RISE) { 289 b = 0.5; 290 td = tf * sqrt(log(vs1) * log(vs1) + 2 * a * b * (1.0 - vs1)) + 291 tf * (log(vs1) - log(vs2)); 292 } else { 293 b = 0.4; 294 td = tf * sqrt(log(1.0 - vs1) * log(1.0 - vs1) + 2 * a * b * (vs1)) + 295 tf * (log(1.0 - vs1) - log(1.0 - vs2)); 296 } 297 return (td); 298} 299 300double cmos_Ileak( 301 double nWidth, 302 double pWidth, 303 bool _is_dram, 304 bool _is_cell, 305 bool _is_wl_tr) { 306 TechnologyParameter::DeviceType * dt; 307 308 if ((!_is_dram) && (_is_cell)) { //SRAM cell access transistor 309 dt = &(g_tp.sram_cell); 310 } else if ((_is_dram) && (_is_wl_tr)) { //DRAM wordline transistor 311 dt = &(g_tp.dram_wl); 312 } else { //DRAM or SRAM all other transistors 313 dt = &(g_tp.peri_global); 314 } 315 return nWidth*dt->I_off_n + pWidth*dt->I_off_p; 316} 317 318 319double simplified_nmos_leakage( 320 double nwidth, 321 bool _is_dram, 322 bool _is_cell, 323 bool _is_wl_tr) { 324 TechnologyParameter::DeviceType * dt; 325 326 if ((!_is_dram) && (_is_cell)) { //SRAM cell access transistor 327 dt = &(g_tp.sram_cell); 328 } else if ((_is_dram) && (_is_wl_tr)) { //DRAM wordline transistor 329 dt = &(g_tp.dram_wl); 330 } else { //DRAM or SRAM all other transistors 331 dt = &(g_tp.peri_global); 332 } 333 return nwidth * dt->I_off_n; 334} 335 336int factorial(int n, int m) { 337 int fa = m, i; 338 for (i = m + 1; i <= n; i++) 339 fa *= i; 340 return fa; 341} 342 343int combination(int n, int m) { 344 int ret; 345 ret = factorial(n, m + 1) / factorial(n - m); 346 return ret; 347} 348 349double simplified_pmos_leakage( 350 double pwidth, 351 bool _is_dram, 352 bool _is_cell, 353 bool _is_wl_tr) { 354 TechnologyParameter::DeviceType * dt; 355 356 if ((!_is_dram) && (_is_cell)) { //SRAM cell access transistor 357 dt = &(g_tp.sram_cell); 358 } else if ((_is_dram) && (_is_wl_tr)) { //DRAM wordline transistor 359 dt = &(g_tp.dram_wl); 360 } else { //DRAM or SRAM all other transistors 361 dt = &(g_tp.peri_global); 362 } 363 return pwidth * dt->I_off_p; 364} 365 366double cmos_Ig_n( 367 double nWidth, 368 bool _is_dram, 369 bool _is_cell, 370 bool _is_wl_tr) { 371 TechnologyParameter::DeviceType * dt; 372 373 if ((!_is_dram) && (_is_cell)) { //SRAM cell access transistor 374 dt = &(g_tp.sram_cell); 375 } else if ((_is_dram) && (_is_wl_tr)) { //DRAM wordline transistor 376 dt = &(g_tp.dram_wl); 377 } else { //DRAM or SRAM all other transistors 378 dt = &(g_tp.peri_global); 379 } 380 return nWidth*dt->I_g_on_n; 381} 382 383double cmos_Ig_p( 384 double pWidth, 385 bool _is_dram, 386 bool _is_cell, 387 bool _is_wl_tr) { 388 TechnologyParameter::DeviceType * dt; 389 390 if ((!_is_dram) && (_is_cell)) { //SRAM cell access transistor 391 dt = &(g_tp.sram_cell); 392 } else if ((_is_dram) && (_is_wl_tr)) { //DRAM wordline transistor 393 dt = &(g_tp.dram_wl); 394 } else { //DRAM or SRAM all other transistors 395 dt = &(g_tp.peri_global); 396 } 397 return pWidth*dt->I_g_on_p; 398} 399 400double cmos_Isub_leakage( 401 double nWidth, 402 double pWidth, 403 int fanin, 404 enum Gate_type g_type, 405 bool _is_dram, 406 bool _is_cell, 407 bool _is_wl_tr, 408 enum Half_net_topology topo) { 409 assert (fanin >= 1); 410 double nmos_leak = simplified_nmos_leakage(nWidth, _is_dram, _is_cell, _is_wl_tr); 411 double pmos_leak = simplified_pmos_leakage(pWidth, _is_dram, _is_cell, _is_wl_tr); 412 double Isub = 0; 413 int num_states; 414 int num_off_tx; 415 416 num_states = int(pow(2.0, fanin)); 417 418 switch (g_type) { 419 case nmos: 420 if (fanin == 1) { 421 Isub = nmos_leak / num_states; 422 } else { 423 if (topo == parallel) { 424 //only when all tx are off, leakage power is non-zero. 425 //The possibility of this state is 1/num_states 426 Isub = nmos_leak * fanin / num_states; 427 } else { 428 for (num_off_tx = 1; num_off_tx <= fanin; num_off_tx++) { 429 //when num_off_tx ==0 there is no leakage power 430 Isub += nmos_leak * pow(UNI_LEAK_STACK_FACTOR, 431 (num_off_tx - 1)) * 432 combination(fanin, num_off_tx); 433 } 434 Isub /= num_states; 435 } 436 437 } 438 break; 439 case pmos: 440 if (fanin == 1) { 441 Isub = pmos_leak / num_states; 442 } else { 443 if (topo == parallel) { 444 //only when all tx are off, leakage power is non-zero. 445 //The possibility of this state is 1/num_states 446 Isub = pmos_leak * fanin / num_states; 447 } else { 448 for (num_off_tx = 1; num_off_tx <= fanin; num_off_tx++) { 449 //when num_off_tx ==0 there is no leakage power 450 Isub += pmos_leak * pow(UNI_LEAK_STACK_FACTOR, 451 (num_off_tx - 1)) * 452 combination(fanin, num_off_tx); 453 } 454 Isub /= num_states; 455 } 456 457 } 458 break; 459 case inv: 460 Isub = (nmos_leak + pmos_leak) / 2; 461 break; 462 case nand: 463 Isub += fanin * pmos_leak;//the pullup network 464 for (num_off_tx = 1; num_off_tx <= fanin; num_off_tx++) { 465 // the pulldown network 466 Isub += nmos_leak * pow(UNI_LEAK_STACK_FACTOR, 467 (num_off_tx - 1)) * 468 combination(fanin, num_off_tx); 469 } 470 Isub /= num_states; 471 break; 472 case nor: 473 for (num_off_tx = 1; num_off_tx <= fanin; num_off_tx++) { 474 // the pullup network 475 Isub += pmos_leak * pow(UNI_LEAK_STACK_FACTOR, 476 (num_off_tx - 1)) * 477 combination(fanin, num_off_tx); 478 } 479 Isub += fanin * nmos_leak;//the pulldown network 480 Isub /= num_states; 481 break; 482 case tri: 483 Isub += (nmos_leak + pmos_leak) / 2;//enabled 484 //disabled upper bound of leakage power 485 Isub += nmos_leak * UNI_LEAK_STACK_FACTOR; 486 Isub /= 2; 487 break; 488 case tg: 489 Isub = (nmos_leak + pmos_leak) / 2; 490 break; 491 default: 492 assert(0); 493 break; 494 } 495 496 return Isub; 497} 498 499 500double cmos_Ig_leakage( 501 double nWidth, 502 double pWidth, 503 int fanin, 504 enum Gate_type g_type, 505 bool _is_dram, 506 bool _is_cell, 507 bool _is_wl_tr, 508 enum Half_net_topology topo) { 509 assert (fanin >= 1); 510 double nmos_leak = cmos_Ig_n(nWidth, _is_dram, _is_cell, _is_wl_tr); 511 double pmos_leak = cmos_Ig_p(pWidth, _is_dram, _is_cell, _is_wl_tr); 512 double Ig_on = 0; 513 int num_states; 514 int num_on_tx; 515 516 num_states = int(pow(2.0, fanin)); 517 518 switch (g_type) { 519 case nmos: 520 if (fanin == 1) { 521 Ig_on = nmos_leak / num_states; 522 } else { 523 if (topo == parallel) { 524 for (num_on_tx = 1; num_on_tx <= fanin; num_on_tx++) { 525 Ig_on += nmos_leak * combination(fanin, num_on_tx) * 526 num_on_tx; 527 } 528 } else { 529 //pull down network when all TXs are on. 530 Ig_on += nmos_leak * fanin; 531 //num_on_tx is the number of on tx 532 for (num_on_tx = 1; num_on_tx < fanin; num_on_tx++) { 533 //when num_on_tx=[1,n-1] 534 //TODO: this is a approximation now, a precise computation 535 //will be very complicated. 536 Ig_on += nmos_leak * combination(fanin, num_on_tx) * 537 num_on_tx / 2; 538 } 539 Ig_on /= num_states; 540 } 541 } 542 break; 543 case pmos: 544 if (fanin == 1) { 545 Ig_on = pmos_leak / num_states; 546 } else { 547 if (topo == parallel) { 548 for (num_on_tx = 1; num_on_tx <= fanin; num_on_tx++) { 549 Ig_on += pmos_leak * combination(fanin, num_on_tx) * 550 num_on_tx; 551 } 552 } else { 553 //pull down network when all TXs are on. 554 Ig_on += pmos_leak * fanin; 555 //num_on_tx is the number of on tx 556 for (num_on_tx = 1; num_on_tx < fanin; num_on_tx++) { 557 //when num_on_tx=[1,n-1] 558 //TODO: this is a approximation now, a precise computation 559 //will be very complicated. 560 Ig_on += pmos_leak * combination(fanin, num_on_tx) * 561 num_on_tx / 2; 562 } 563 Ig_on /= num_states; 564 } 565 } 566 break; 567 568 case inv: 569 Ig_on = (nmos_leak + pmos_leak) / 2; 570 break; 571 case nand: 572 //pull up network 573 //when num_on_tx=[1,n] 574 for (num_on_tx = 1; num_on_tx <= fanin; num_on_tx++) { 575 Ig_on += pmos_leak * combination(fanin, num_on_tx) * num_on_tx; 576 } 577 578 //pull down network 579 Ig_on += nmos_leak * fanin;//pull down network when all TXs are on. 580 //num_on_tx is the number of on tx 581 for (num_on_tx = 1; num_on_tx < fanin; num_on_tx++) { 582 //when num_on_tx=[1,n-1] 583 //TODO: this is a approximation now, a precise computation will be 584 //very complicated. 585 Ig_on += nmos_leak * combination(fanin, num_on_tx) * num_on_tx / 2; 586 } 587 Ig_on /= num_states; 588 break; 589 case nor: 590 // num_on_tx is the number of on tx in pull up network 591 Ig_on += pmos_leak * fanin;//pull up network when all TXs are on. 592 for (num_on_tx = 1; num_on_tx < fanin; num_on_tx++) { 593 Ig_on += pmos_leak * combination(fanin, num_on_tx) * num_on_tx / 2; 594 595 } 596 //pull down network 597 for (num_on_tx = 1; num_on_tx <= fanin; num_on_tx++) { 598 //when num_on_tx=[1,n] 599 Ig_on += nmos_leak * combination(fanin, num_on_tx) * num_on_tx; 600 } 601 Ig_on /= num_states; 602 break; 603 case tri: 604 Ig_on += (2 * nmos_leak + 2 * pmos_leak) / 2;//enabled 605 //disabled upper bound of leakage power 606 Ig_on += (nmos_leak + pmos_leak) / 2; 607 Ig_on /= 2; 608 break; 609 case tg: 610 Ig_on = (nmos_leak + pmos_leak) / 2; 611 break; 612 default: 613 assert(0); 614 break; 615 } 616 617 return Ig_on; 618} 619 620double shortcircuit_simple( 621 double vt, 622 double velocity_index, 623 double c_in, 624 double c_out, 625 double w_nmos, 626 double w_pmos, 627 double i_on_n, 628 double i_on_p, 629 double i_on_n_in, 630 double i_on_p_in, 631 double vdd) { 632 633 double p_short_circuit, p_short_circuit_discharge, p_short_circuit_charge, p_short_circuit_discharge_low, p_short_circuit_discharge_high, p_short_circuit_charge_low, p_short_circuit_charge_high; //this is actually energy 634 double fo_n, fo_p, fanout, beta_ratio, vt_to_vdd_ratio; 635 636 fo_n = i_on_n / i_on_n_in; 637 fo_p = i_on_p / i_on_p_in; 638 fanout = c_out / c_in; 639 beta_ratio = i_on_p / i_on_n; 640 vt_to_vdd_ratio = vt / vdd; 641 642 //p_short_circuit_discharge_low = 10/3*(pow(0.5-vt_to_vdd_ratio,3.0)/pow(velocity_index,2.0)/pow(2.0,3*vt_to_vdd_ratio*vt_to_vdd_ratio))*c_in*vdd*vdd*fo_p*fo_p/fanout/beta_ratio; 643 p_short_circuit_discharge_low = 644 10 / 3 * (pow(((vdd - vt) - vt_to_vdd_ratio), 3.0) / 645 pow(velocity_index, 2.0) / pow(2.0, 3 * vt_to_vdd_ratio * 646 vt_to_vdd_ratio)) * c_in * 647 vdd * vdd * fo_p * fo_p / fanout / beta_ratio; 648 p_short_circuit_charge_low = 649 10 / 3 * (pow(((vdd - vt) - vt_to_vdd_ratio), 3.0) / 650 pow(velocity_index, 2.0) / pow(2.0, 3 * vt_to_vdd_ratio * 651 vt_to_vdd_ratio)) * c_in * 652 vdd * vdd * fo_n * fo_n / fanout * beta_ratio; 653// double t1, t2, t3, t4, t5; 654// t1=pow(((vdd-vt)-vt_to_vdd_ratio),3); 655// t2=pow(velocity_index,2.0); 656// t3=pow(2.0,3*vt_to_vdd_ratio*vt_to_vdd_ratio); 657// t4=t1/t2/t3; 658// cout <<t1<<"t1\n"<<t2<<"t2\n"<<t3<<"t3\n"<<t4<<"t4\n"<<fanout<<endl; 659 660 p_short_circuit_discharge_high = 661 pow(((vdd - vt) - vt_to_vdd_ratio), 1.5) * c_in * vdd * vdd * 662 fo_p / 10 / pow(2, 3 * vt_to_vdd_ratio + 2 * velocity_index); 663 p_short_circuit_charge_high = pow(((vdd - vt) - vt_to_vdd_ratio), 1.5) * 664 c_in * vdd * vdd * fo_n / 10 / pow(2, 3 * vt_to_vdd_ratio + 2 * 665 velocity_index); 666 667// t1=pow(((vdd-vt)-vt_to_vdd_ratio),1.5); 668// t2=pow(2, 3*vt_to_vdd_ratio+2*velocity_index); 669// t3=t1/t2; 670// cout <<t1<<"t1\n"<<t2<<"t2\n"<<t3<<"t3\n"<<t4<<"t4\n"<<fanout<<endl; 671// p_short_circuit_discharge = 1.0/(1.0/p_short_circuit_discharge_low + 1.0/p_short_circuit_discharge_high); 672// p_short_circuit_charge = 1/(1/p_short_circuit_charge_low + 1/p_short_circuit_charge_high); //harmmoic mean cannot be applied simple formulas. 673 674 p_short_circuit_discharge = p_short_circuit_discharge_low; 675 p_short_circuit_charge = p_short_circuit_charge_low; 676 p_short_circuit = (p_short_circuit_discharge + p_short_circuit_charge) / 2; 677 678 return (p_short_circuit); 679} 680 681double shortcircuit( 682 double vt, 683 double velocity_index, 684 double c_in, 685 double c_out, 686 double w_nmos, 687 double w_pmos, 688 double i_on_n, 689 double i_on_p, 690 double i_on_n_in, 691 double i_on_p_in, 692 double vdd) { 693 694 //this is actually energy 695 double p_short_circuit = 0, p_short_circuit_discharge; 696 double fo_n, fo_p, fanout, beta_ratio, vt_to_vdd_ratio; 697 double f_alpha, k_v, e, g_v_alpha, h_v_alpha; 698 699 fo_n = i_on_n / i_on_n_in; 700 fo_p = i_on_p / i_on_p_in; 701 fanout = 1; 702 beta_ratio = i_on_p / i_on_n; 703 vt_to_vdd_ratio = vt / vdd; 704 e = 2.71828; 705 f_alpha = 1 / (velocity_index + 2) - velocity_index / 706 (2 * (velocity_index + 3)) + velocity_index / (velocity_index + 4) * 707 (velocity_index / 2 - 1); 708 k_v = 0.9 / 0.8 + (vdd - vt) / 0.8 * log(10 * (vdd - vt) / e); 709 g_v_alpha = (velocity_index + 1) * 710 pow((1 - velocity_index), velocity_index) * 711 pow((1 - velocity_index), velocity_index / 2) / f_alpha / 712 pow((1 - velocity_index - velocity_index), 713 (velocity_index / 2 + velocity_index + 2)); 714 h_v_alpha = pow(2, velocity_index) * (velocity_index + 1) * 715 pow((1 - velocity_index), velocity_index) / 716 pow((1 - velocity_index - velocity_index), (velocity_index + 1)); 717 718 //p_short_circuit_discharge_low = 10/3*(pow(0.5-vt_to_vdd_ratio,3.0)/pow(velocity_index,2.0)/pow(2.0,3*vt_to_vdd_ratio*vt_to_vdd_ratio))*c_in*vdd*vdd*fo_p*fo_p/fanout/beta_ratio; 719// p_short_circuit_discharge_low = 10/3*(pow(((vdd-vt)-vt_to_vdd_ratio),3.0)/pow(velocity_index,2.0)/pow(2.0,3*vt_to_vdd_ratio*vt_to_vdd_ratio))*c_in*vdd*vdd*fo_p*fo_p/fanout/beta_ratio; 720// p_short_circuit_charge_low = 10/3*(pow(((vdd-vt)-vt_to_vdd_ratio),3.0)/pow(velocity_index,2.0)/pow(2.0,3*vt_to_vdd_ratio*vt_to_vdd_ratio))*c_in*vdd*vdd*fo_n*fo_n/fanout*beta_ratio; 721// double t1, t2, t3, t4, t5; 722// t1=pow(((vdd-vt)-vt_to_vdd_ratio),3); 723// t2=pow(velocity_index,2.0); 724// t3=pow(2.0,3*vt_to_vdd_ratio*vt_to_vdd_ratio); 725// t4=t1/t2/t3; 726// 727// cout <<t1<<"t1\n"<<t2<<"t2\n"<<t3<<"t3\n"<<t4<<"t4\n"<<fanout<<endl; 728// 729// 730// p_short_circuit_discharge_high = pow(((vdd-vt)-vt_to_vdd_ratio),1.5)*c_in*vdd*vdd*fo_p/10/pow(2, 3*vt_to_vdd_ratio+2*velocity_index); 731// p_short_circuit_charge_high = pow(((vdd-vt)-vt_to_vdd_ratio),1.5)*c_in*vdd*vdd*fo_n/10/pow(2, 3*vt_to_vdd_ratio+2*velocity_index); 732// 733// p_short_circuit_discharge = 1.0/(1.0/p_short_circuit_discharge_low + 1.0/p_short_circuit_discharge_high); 734// p_short_circuit_charge = 1/(1/p_short_circuit_charge_low + 1/p_short_circuit_charge_high); 735// 736// p_short_circuit = (p_short_circuit_discharge + p_short_circuit_charge)/2; 737// 738// p_short_circuit = p_short_circuit_discharge; 739 740 p_short_circuit_discharge = k_v * vdd * vdd * c_in * fo_p * fo_p / 741 ((vdd - vt) * g_v_alpha * fanout * beta_ratio / 2 / k_v + h_v_alpha * 742 fo_p); 743 return (p_short_circuit); 744} 745