mcpat/cacti/technology.cc

62 void init_tech_params(double technology, bool is_tag) {
74     technology  = technology * 1000.0;  // in the unit of nm
104     if (technology < 181 && technology > 179) {
107     } else if (technology < 91 && technology > 89) {
110     } else if (technology < 66 && technology > 64) {
113     } else if (technology < 46 && technology > 44) {
116     } else if (technology < 33 && technology > 31) {
119     } else if (technology < 23 && technology > 21) {
127     } else if (technology < 180 && technology > 90) {
130     } else if (technology < 90 && technology > 65) {
133     } else if (technology < 65 && technology > 45) {
136     } else if (technology < 45 && technology > 32) {
139     } else if (technology < 32 && technology > 22) {
143 //  else if (technology < 22 && technology > 16)
149         cout << "Invalid technology nodes" << endl;
181                 curr_alpha = (technology - tech_hi) / (tech_lo - tech_hi);
188                 curr_alpha = (tech_lo - technology) / (tech_lo - tech_hi);
193             //180nm technology-node. Corresponds to year 1999 in ITRS
267             //90nm technology-node. Corresponds to year 2004 in ITRS
402                 //LP-DRAM cell access transistor technology parameters
447                 //COMM-DRAM cell access transistor technology parameters
516             //65nm technology-node. Corresponds to year 2007 in ITRS
653                 //LP-DRAM cell access transistor technology parameters
698                 //COMM-DRAM cell access transistor technology parameters
765             //45nm technology-node. Corresponds to year 2010 in ITRS
905                 //LP-DRAM cell access transistor technology parameters
950                 //COMM-DRAM cell access transistor technology parameters
1021             //technology i.e. FEATURESIZE = 0.032). Using the SOI process numbers for
1157                 //LP-DRAM cell access transistor technology parameters
1202                 //COMM-DRAM cell access transistor technology parameters
1272             //technology i.e. FEATURESIZE = 0.022). Using the DG process numbers for HP.
1412                 //22 nm commodity DRAM cell access transistor technology parameters.
1414                 curr_vdd_dram_cell = 0.9;//0.45;//This value has reduced greatly in 2007 ITRS for all technology nodes. In
1488             //technology i.e. FEATURESIZE = 0.016). Using the DG process numbers for HP.
1535                 //22 nm commodity DRAM cell access transistor technology parameters.
1537                 curr_vdd_dram_cell = 0.9;//0.45;//This value has reduced greatly in 2007 ITRS for all technology nodes. In
1818                 curr_alpha = (technology - tech_hi) / (tech_lo - tech_hi);
1825                 curr_alpha = (tech_lo - technology) / (tech_lo - tech_hi);