mcpat/cacti/technology.cc

164     double I_on_n[NUMBER_TECH_FLAVORS];
210             I_on_n[0] = 750e-6;//A/micron
216             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
280             I_on_n[0] = 1076.9e-6;//A/micron
286             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
325             I_on_n[1] = 503.6e-6;
330             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];
369             I_on_n[2] = 386.6e-6;
374             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];
427                 I_on_n[3] = 321.6e-6;
432                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
472                 I_on_n[3] = 1094.3e-6;
473                 I_on_p[3] = I_on_n[3] / 2;
477                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
531             I_on_n[0] = 1197.2e-6;
536             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];
576             I_on_n[1] = 519.2e-6;
581             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];
620             I_on_n[2] = 573.1e-6;
625             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];
678                 I_on_n[3] = 399.8e-6;
683                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
723                 I_on_n[3] = 1031e-6;
724                 I_on_p[3] = I_on_n[3] / 2;
728                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
780             I_on_n[0] = 2046.6e-6;
783             I_on_p[0] = I_on_n[0] / 2;//This value is fixed arbitrarily but I_on_p is not being used in CACTI
787             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];
828             I_on_n[1] = 666.2e-6;
829             I_on_p[1] = I_on_n[1] / 2;
833             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];
872             I_on_n[2] = 748.9e-6;
873             I_on_p[2] = I_on_n[2] / 2;
877             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];
930                 I_on_n[3] = 456e-6;
931                 I_on_p[3] = I_on_n[3] / 2;
935                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
975                 I_on_n[3] = 999.4e-6;
976                 I_on_p[3] = I_on_n[3] / 2;
980                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
1034             I_on_n[0] =  2211.7e-6;
1035             I_on_p[0] = I_on_n[0] / 2;
1039             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
1080             I_on_n[1] = 683.6e-6;
1081             I_on_p[1] = I_on_n[1] / 2;
1085             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];
1124             I_on_n[2] = 827.8e-6;
1125             I_on_p[2] = I_on_n[2] / 2;
1129             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];
1182                 I_on_n[3] = 1055.4e-6;
1183                 I_on_p[3] = I_on_n[3] / 2;
1187                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
1227                 I_on_n[3] = 1024.5e-6;
1228                 I_on_p[3] = I_on_n[3] / 2;
1232                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp / I_on_n[3];
1285             I_on_n[0] =  2626.4e-6;//A/micron
1286             I_on_p[0] = I_on_n[0] / 2;//A/micron //This value for I_on_p is not really used.
1291             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
1332             I_on_n[1] = 727.6e-6;//A/micron
1333             I_on_p[1] = I_on_n[1] / 2;
1337             Rnchannelon[1] = nmos_effective_resistance_multiplier * vdd[1] / I_on_n[1];//ohm-micron
1376             I_on_n[2] = 916.1e-6;//A/micron
1377             I_on_p[2] = I_on_n[2] / 2;
1381             Rnchannelon[2] = nmos_effective_resistance_multiplier * vdd[2] / I_on_n[2];//ohm-micron
1441                 I_on_n[3] = 910.5e-6;//A/micron
1442                 I_on_p[3] = I_on_n[3] / 2;//This value for I_on_p is not really used.
1447                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp  / I_on_n[3];//ohm-micron
1501             I_on_n[0] =  2768.4e-6;//A/micron
1502             I_on_p[0] = I_on_n[0] / 2;//A/micron //This value for I_on_p is not really used.
1507             Rnchannelon[0] = nmos_effective_resistance_multiplier * vdd[0] / I_on_n[0];//ohm-micron
1564                 I_on_n[3] = 910.5e-6;//A/micron
1565                 I_on_p[3] = I_on_n[3] / 2;//This value for I_on_p is not really used.
1570                 Rnchannelon[3] = nmos_effective_resistance_multiplier * curr_vpp  / I_on_n[3];//ohm-micron
1620         g_tp.peri_global.I_on_n    += curr_alpha * I_on_n[peri_global_tech_type];
1642         g_tp.sram_cell.I_on_n    += curr_alpha * I_on_n[ram_cell_tech_type];
1662         g_tp.dram_acc.I_on_n    += curr_alpha * I_on_n[dram_cell_tech_flavor];
1671         g_tp.dram_wl.I_on_n     += curr_alpha * I_on_n[dram_cell_tech_flavor];
1688         g_tp.cam_cell.I_on_n    += curr_alpha * I_on_n[ram_cell_tech_type];
1778     g_tp.dram_acc.R_nch_on = g_tp.dram_cell_Vdd / g_tp.dram_acc.I_on_n;