mcpat/cacti/decoder.cc

410             w_L2_n[0] = 2 * g_tp.min_w_nmos_;
413             w_L2_n[0] = 3 * g_tp.min_w_nmos_;
417         F *= C_ld_predec_blk_out / (gate_C(w_L2_n[0], 0, is_dram_) + gate_C(w_L2_p[0], 0, is_dram_));
422                               w_L2_n,
437                                 (gate_C(w_L2_n[0], 0, is_dram_) +
461                                 (gate_C(w_L2_n[0], 0, is_dram_) +
626             cumulative_area_L2 = compute_gate_area(NAND, 2, w_L2_p[0], w_L2_n[0], g_tp.cell_h_def);
627             leakage_L2         = cmos_Isub_leakage(w_L2_n[0], w_L2_p[0], 2, nand, is_dram_);
628             gate_leakage_L2    = cmos_Ig_leakage(w_L2_n[0], w_L2_p[0], 2, nand, is_dram_);
630             cumulative_area_L2 = compute_gate_area(NAND, 3, w_L2_p[0], w_L2_n[0], g_tp.cell_h_def);
631             leakage_L2         = cmos_Isub_leakage(w_L2_n[0], w_L2_p[0], 3, nand, is_dram_);
632             gate_leakage_L2    = cmos_Ig_leakage(w_L2_n[0], w_L2_p[0], 3, nand, is_dram_);
636             cumulative_area_L2 += compute_gate_area(INV, 1, w_L2_p[i], w_L2_n[i], g_tp.cell_h_def);
637             leakage_L2         += cmos_Isub_leakage(w_L2_n[i], w_L2_p[i], 2, inv, is_dram_);
638             gate_leakage_L2    += cmos_Ig_leakage(w_L2_n[i], w_L2_p[i], 2, inv, is_dram_);
703                     (gate_C(w_L2_n[0], 0, is_dram_) +
755                     (gate_C(w_L2_n[0], 0, is_dram_) + gate_C(w_L2_p[0], 0,
779                 rd = tr_R_on(w_L2_n[0], NCH, 2, is_dram_);
780                 c_load = gate_C(w_L2_n[1] + w_L2_p[1], 0.0, is_dram_);
782                               drain_C_(w_L2_n[0], NCH, 2, 1, g_tp.cell_h_def, is_dram_);
789                 rd = tr_R_on(w_L2_n[0], NCH, 3, is_dram_);
790                 c_load = gate_C(w_L2_n[1] + w_L2_p[1], 0.0, is_dram_);
792                               drain_C_(w_L2_n[0], NCH, 3, 1, g_tp.cell_h_def, is_dram_);
801                 rd = tr_R_on(w_L2_n[i], NCH, 1, is_dram_);
802                 c_load = gate_C(w_L2_n[i+1] + w_L2_p[i+1], 0.0, is_dram_);
804                               drain_C_(w_L2_n[i], NCH, 1, 1, g_tp.cell_h_def, is_dram_);
818             rd = tr_R_on(w_L2_n[i], NCH, 1, is_dram_);
820                           drain_C_(w_L2_n[i], NCH, 1, 1, g_tp.cell_h_def, is_dram_);
941       leakage_L2         = cmos_Isub_leakage(w_L2_n[0], w_L2_p[0], 2, nand, is_dram_);
942       gate_leakage_L2    = cmos_Ig_leakage(w_L2_n[0], w_L2_p[0], 2, nand, is_dram_);
946       leakage_L2         = cmos_Isub_leakage(w_L2_n[0], w_L2_p[0], 3, nand, is_dram_);
947       gate_leakage_L2    = cmos_Ig_leakage(w_L2_n[0], w_L2_p[0], 3, nand, is_dram_);
952       leakage_L2         += cmos_Isub_leakage(w_L2_n[i], w_L2_p[i], 2, inv, is_dram_);
953       gate_leakage_L2    += cmos_Ig_leakage(w_L2_n[i], w_L2_p[i], 2, inv, is_dram_);