Lines Matching refs:w_L1_nand3_p
304 w_L1_nand3_p[0] = 0;
464 w_L1_nand3_p[0] = p_to_n_sz_ratio * g_tp.min_w_nmos_;
467 gate_C(w_L1_nand3_p[0], 0, is_dram_));
473 w_L1_nand3_p,
498 w_L1_nand3_p[0] = p_to_n_sz_ratio * g_tp.min_w_nmos_;
501 gate_C(w_L1_nand3_p[0], 0, is_dram_));
507 w_L1_nand3_p,
535 tot_area_L1_nand3 = compute_gate_area(NAND, 3, w_L1_nand3_p[0], w_L1_nand3_n[0], g_tp.cell_h_def);
536 leak_L1_nand3 = cmos_Isub_leakage(w_L1_nand3_n[0], w_L1_nand3_p[0], 3, nand);
537 gate_leak_L1_nand3 = cmos_Ig_leakage(w_L1_nand3_n[0], w_L1_nand3_p[0], 3, nand);
612 tot_area_L1_nand3 += compute_gate_area(INV, 1, w_L1_nand3_p[i], w_L1_nand3_n[i], g_tp.cell_h_def);
613 leak_L1_nand3 += cmos_Isub_leakage(w_L1_nand3_n[i], w_L1_nand3_p[i], 3, nand, is_dram_);
614 gate_leak_L1_nand3 += cmos_Ig_leakage(w_L1_nand3_n[i], w_L1_nand3_p[i], 3, nand, is_dram_);
728 c_load = gate_C(w_L1_nand3_n[1] + w_L1_nand3_p[1], 0.0, is_dram_);
729 c_intrinsic = 3 * drain_C_(w_L1_nand3_p[0], PCH, 1, 1, g_tp.cell_h_def, is_dram_) +
740 c_load = gate_C(w_L1_nand3_n[i+1] + w_L1_nand3_p[i+1], 0.0, is_dram_);
741 c_intrinsic = drain_C_(w_L1_nand3_p[i], PCH, 1, 1, g_tp.cell_h_def, is_dram_) +
757 c_intrinsic = drain_C_(w_L1_nand3_p[i], PCH, 1, 1, g_tp.cell_h_def, is_dram_) +
766 c_intrinsic = drain_C_(w_L1_nand3_p[i], PCH, 1, 1, g_tp.cell_h_def, is_dram_) +
853 leak_L1_nand3 = cmos_Isub_leakage(w_L1_nand3_n[0], w_L1_nand3_p[0], 3, nand);
854 gate_leak_L1_nand3 = cmos_Ig_leakage(w_L1_nand3_n[0], w_L1_nand3_p[0], 3, nand);
930 leak_L1_nand3 += cmos_Isub_leakage(w_L1_nand3_n[i], w_L1_nand3_p[i], 3, nand, is_dram_);
931 gate_leak_L1_nand3 += cmos_Ig_leakage(w_L1_nand3_n[i], w_L1_nand3_p[i], 3, nand, is_dram_);
1034 double C_nand3_gate_blk = gate_C(blk->w_L1_nand3_n[0] + blk->w_L1_nand3_p[0], 0, is_dram_);