Lines Matching refs:w_L1_nand2_p

302     w_L1_nand2_p[0] = 0;
440 w_L1_nand2_p[0] = p_to_n_sz_ratio * g_tp.min_w_nmos_;
443 gate_C(w_L1_nand2_p[0], 0, is_dram_));
449 w_L1_nand2_p,
482 w_L1_nand2_p[0] = p_to_n_sz_ratio * g_tp.min_w_nmos_;
485 gate_C(w_L1_nand2_p[0], 0, is_dram_));
491 w_L1_nand2_p,
527 double tot_area_L1_nand2 = compute_gate_area(NAND, 2, w_L1_nand2_p[0], w_L1_nand2_n[0], g_tp.cell_h_def);
528 double leak_L1_nand2 = cmos_Isub_leakage(w_L1_nand2_n[0], w_L1_nand2_p[0], 2, nand, is_dram_);
529 double gate_leak_L1_nand2 = cmos_Ig_leakage(w_L1_nand2_n[0], w_L1_nand2_p[0], 2, nand, is_dram_);
603 tot_area_L1_nand2 += compute_gate_area(INV, 1, w_L1_nand2_p[i], w_L1_nand2_n[i], g_tp.cell_h_def);
604 leak_L1_nand2 += cmos_Isub_leakage(w_L1_nand2_n[i], w_L1_nand2_p[i], 2, nand, is_dram_);
605 gate_leak_L1_nand2 += cmos_Ig_leakage(w_L1_nand2_n[i], w_L1_nand2_p[i], 2, nand, is_dram_);
676 c_load = gate_C(w_L1_nand2_n[1] + w_L1_nand2_p[1], 0.0, is_dram_);
677 c_intrinsic = 2 * drain_C_(w_L1_nand2_p[0], PCH, 1, 1, g_tp.cell_h_def, is_dram_) +
688 c_load = gate_C(w_L1_nand2_n[i+1] + w_L1_nand2_p[i+1], 0.0, is_dram_);
689 c_intrinsic = drain_C_(w_L1_nand2_p[i], PCH, 1, 1, g_tp.cell_h_def, is_dram_) +
705 c_intrinsic = drain_C_(w_L1_nand2_p[i], PCH, 1, 1, g_tp.cell_h_def, is_dram_) +
714 c_intrinsic = drain_C_(w_L1_nand2_p[i], PCH, 1, 1, g_tp.cell_h_def, is_dram_) +
846 double leak_L1_nand2 = cmos_Isub_leakage(w_L1_nand2_n[0], w_L1_nand2_p[0], 2, nand, is_dram_);
847 double gate_leak_L1_nand2 = cmos_Ig_leakage(w_L1_nand2_n[0], w_L1_nand2_p[0], 2, nand, is_dram_);
922 leak_L1_nand2 += cmos_Isub_leakage(w_L1_nand2_n[i], w_L1_nand2_p[i], 2, nand, is_dram_);
923 gate_leak_L1_nand2 += cmos_Ig_leakage(w_L1_nand2_n[i], w_L1_nand2_p[i], 2, nand, is_dram_);
1033 double C_nand2_gate_blk = gate_C(blk->w_L1_nand2_n[0] + blk->w_L1_nand2_p[0], 0, is_dram_);