4a5
> * Copyright (c) 2010-2013 Advanced Micro Devices, Inc.
28c29
< * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.”
---
> * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
44,64c45,65
< ):wt(wire_model), wire_length(wl*1e-6), nsense(n), w_scale(w_s), s_scale(s_s),
< resistivity(resistivity), deviceType(dt)
< {
< wire_placement = wp;
< min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio*g_tp.min_w_nmos_;
< in_rise_time = 0;
< out_rise_time = 0;
< if (initialized != 1) {
< cout << "Wire not initialized. Initializing it with default values\n";
< Wire winit;
< }
< calculate_wire_stats();
< // change everything back to seconds, microns, and Joules
< repeater_spacing *= 1e6;
< wire_length *= 1e6;
< wire_width *= 1e6;
< wire_spacing *= 1e6;
< assert(wire_length > 0);
< assert(power.readOp.dynamic > 0);
< assert(power.readOp.leakage > 0);
< assert(power.readOp.gate_leakage > 0);
---
> ): wt(wire_model), wire_length(wl*1e-6), nsense(n), w_scale(w_s),
> s_scale(s_s),
> resistivity(resistivity), deviceType(dt) {
> wire_placement = wp;
> min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio * g_tp.min_w_nmos_;
> in_rise_time = 0;
> out_rise_time = 0;
> if (initialized != 1) {
> cout << "Wire not initialized. Initializing it with default values\n";
> Wire winit;
> }
> calculate_wire_stats();
> // change everything back to seconds, microns, and Joules
> repeater_spacing *= 1e6;
> wire_length *= 1e6;
> wire_width *= 1e6;
> wire_spacing *= 1e6;
> assert(wire_length > 0);
> assert(power.readOp.dynamic > 0);
> assert(power.readOp.leakage > 0);
> assert(power.readOp.gate_leakage > 0);
67,74c68,75
< // the following values are for peripheral global technology
< // specified in the input config file
< Component Wire::global;
< Component Wire::global_5;
< Component Wire::global_10;
< Component Wire::global_20;
< Component Wire::global_30;
< Component Wire::low_swing;
---
> // the following values are for peripheral global technology
> // specified in the input config file
> Component Wire::global;
> Component Wire::global_5;
> Component Wire::global_10;
> Component Wire::global_20;
> Component Wire::global_30;
> Component Wire::low_swing;
76,78c77,79
< int Wire::initialized;
< double Wire::wire_width_init;
< double Wire::wire_spacing_init;
---
> int Wire::initialized;
> double Wire::wire_width_init;
> double Wire::wire_spacing_init;
81,90c82,91
< Wire::Wire(double w_s, double s_s, enum Wire_placement wp, double resis, TechnologyParameter::DeviceType *dt)
< {
< w_scale = w_s;
< s_scale = s_s;
< deviceType = dt;
< wire_placement = wp;
< resistivity = resis;
< min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio * g_tp.min_w_nmos_;
< in_rise_time = 0;
< out_rise_time = 0;
---
> Wire::Wire(double w_s, double s_s, enum Wire_placement wp, double resis,
> TechnologyParameter::DeviceType *dt) {
> w_scale = w_s;
> s_scale = s_s;
> deviceType = dt;
> wire_placement = wp;
> resistivity = resis;
> min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio * g_tp.min_w_nmos_;
> in_rise_time = 0;
> out_rise_time = 0;
92,97c93,103
< switch (wire_placement)
< {
< case outside_mat: wire_width = g_tp.wire_outside_mat.pitch; break;
< case inside_mat : wire_width = g_tp.wire_inside_mat.pitch; break;
< default: wire_width = g_tp.wire_local.pitch; break;
< }
---
> switch (wire_placement) {
> case outside_mat:
> wire_width = g_tp.wire_outside_mat.pitch;
> break;
> case inside_mat :
> wire_width = g_tp.wire_inside_mat.pitch;
> break;
> default:
> wire_width = g_tp.wire_local.pitch;
> break;
> }
99c105
< wire_spacing = wire_width;
---
> wire_spacing = wire_width;
101,102c107,108
< wire_width *= (w_scale * 1e-6/2) /* (m) */;
< wire_spacing *= (s_scale * 1e-6/2) /* (m) */;
---
> wire_width *= (w_scale * 1e-6 / 2) /* (m) */;
> wire_spacing *= (s_scale * 1e-6 / 2) /* (m) */;
104,107c110,113
< initialized = 1;
< init_wire();
< wire_width_init = wire_width;
< wire_spacing_init = wire_spacing;
---
> initialized = 1;
> init_wire();
> wire_width_init = wire_width;
> wire_spacing_init = wire_spacing;
109,111c115,117
< assert(power.readOp.dynamic > 0);
< assert(power.readOp.leakage > 0);
< assert(power.readOp.gate_leakage > 0);
---
> assert(power.readOp.dynamic > 0);
> assert(power.readOp.leakage > 0);
> assert(power.readOp.gate_leakage > 0);
116,117c122
< Wire::~Wire()
< {
---
> Wire::~Wire() {
123,124c128
< Wire::calculate_wire_stats()
< {
---
> Wire::calculate_wire_stats() {
126,134c130,136
< if (wire_placement == outside_mat) {
< wire_width = g_tp.wire_outside_mat.pitch;
< }
< else if (wire_placement == inside_mat) {
< wire_width = g_tp.wire_inside_mat.pitch;
< }
< else {
< wire_width = g_tp.wire_local.pitch;
< }
---
> if (wire_placement == outside_mat) {
> wire_width = g_tp.wire_outside_mat.pitch;
> } else if (wire_placement == inside_mat) {
> wire_width = g_tp.wire_inside_mat.pitch;
> } else {
> wire_width = g_tp.wire_local.pitch;
> }
136c138
< wire_spacing = wire_width;
---
> wire_spacing = wire_width;
138,139c140,141
< wire_width *= (w_scale * 1e-6/2) /* (m) */;
< wire_spacing *= (s_scale * 1e-6/2) /* (m) */;
---
> wire_width *= (w_scale * 1e-6 / 2) /* (m) */;
> wire_spacing *= (s_scale * 1e-6 / 2) /* (m) */;
142c144
< if (wt != Low_swing) {
---
> if (wt != Low_swing) {
144c146
< // delay_optimal_wire();
---
> // delay_optimal_wire();
146,210c148,211
< if (wt == Global) {
< delay = global.delay * wire_length;
< power.readOp.dynamic = global.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global.area.w;
< repeater_size = global.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< else if (wt == Global_5) {
< delay = global_5.delay * wire_length;
< power.readOp.dynamic = global_5.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global_5.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global_5.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global_5.area.w;
< repeater_size = global_5.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< else if (wt == Global_10) {
< delay = global_10.delay * wire_length;
< power.readOp.dynamic = global_10.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global_10.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global_10.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global_10.area.w;
< repeater_size = global_10.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< else if (wt == Global_20) {
< delay = global_20.delay * wire_length;
< power.readOp.dynamic = global_20.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global_20.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global_20.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global_20.area.w;
< repeater_size = global_20.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< else if (wt == Global_30) {
< delay = global_30.delay * wire_length;
< power.readOp.dynamic = global_30.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global_30.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global_30.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global_30.area.w;
< repeater_size = global_30.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< out_rise_time = delay*repeater_spacing/deviceType->Vth;
< }
< else if (wt == Low_swing) {
< low_swing_model ();
< repeater_spacing = wire_length;
< repeater_size = 1;
< }
< else {
< assert(0);
< }
---
> if (wt == Global) {
> delay = global.delay * wire_length;
> power.readOp.dynamic = global.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global.area.w;
> repeater_size = global.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> } else if (wt == Global_5) {
> delay = global_5.delay * wire_length;
> power.readOp.dynamic = global_5.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global_5.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global_5.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global_5.area.w;
> repeater_size = global_5.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> } else if (wt == Global_10) {
> delay = global_10.delay * wire_length;
> power.readOp.dynamic = global_10.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global_10.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global_10.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global_10.area.w;
> repeater_size = global_10.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> } else if (wt == Global_20) {
> delay = global_20.delay * wire_length;
> power.readOp.dynamic = global_20.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global_20.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global_20.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global_20.area.w;
> repeater_size = global_20.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> } else if (wt == Global_30) {
> delay = global_30.delay * wire_length;
> power.readOp.dynamic = global_30.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global_30.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global_30.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global_30.area.w;
> repeater_size = global_30.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> }
> out_rise_time = delay * repeater_spacing / deviceType->Vth;
> } else if (wt == Low_swing) {
> low_swing_model ();
> repeater_spacing = wire_length;
> repeater_size = 1;
> } else {
> assert(0);
> }
221,223c222,223
< double
< Wire::signal_fall_time ()
< {
---
> double
> Wire::signal_fall_time () {
225,229c225,229
< /* rise time of inverter 1's output */
< double rt;
< /* fall time of inverter 2's output */
< double ft;
< double timeconst;
---
> /* rise time of inverter 1's output */
> double rt;
> /* fall time of inverter 2's output */
> double ft;
> double timeconst;
231,241c231,244
< timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
< tr_R_on(min_w_pmos, PCH, 1);
< rt = horowitz (0, timeconst, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, FALL) / (deviceType->Vdd - deviceType->Vth);
< timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
< tr_R_on(g_tp.min_w_nmos_, NCH, 1);
< ft = horowitz (rt, timeconst, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, RISE) / deviceType->Vth;
< return ft;
---
> timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
> tr_R_on(min_w_pmos, PCH, 1);
> rt = horowitz (0, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, FALL) /
> (deviceType->Vdd - deviceType->Vth);
> timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
> tr_R_on(g_tp.min_w_nmos_, NCH, 1);
> ft = horowitz (rt, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, RISE) / deviceType->Vth;
> return ft;
246,247c249
< double Wire::signal_rise_time ()
< {
---
> double Wire::signal_rise_time () {
249,253c251,255
< /* rise time of inverter 1's output */
< double ft;
< /* fall time of inverter 2's output */
< double rt;
< double timeconst;
---
> /* rise time of inverter 1's output */
> double ft;
> /* fall time of inverter 2's output */
> double rt;
> double timeconst;
255,265c257,270
< timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
< tr_R_on(g_tp.min_w_nmos_, NCH, 1);
< rt = horowitz (0, timeconst, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, RISE) / deviceType->Vth;
< timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
< tr_R_on(min_w_pmos, PCH, 1);
< ft = horowitz (rt, timeconst, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, FALL) / (deviceType->Vdd - deviceType->Vth);
< return ft; //sec
---
> timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
> tr_R_on(g_tp.min_w_nmos_, NCH, 1);
> rt = horowitz (0, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, RISE) / deviceType->Vth;
> timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
> tr_R_on(min_w_pmos, PCH, 1);
> ft = horowitz (rt, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, FALL) /
> (deviceType->Vdd - deviceType->Vth);
> return ft; //sec
284,290c289,298
< double Wire::wire_cap (double len /* in m */, bool call_from_outside)
< {
< //TODO: this should be consistent with the wire_res in technology file
< double sidewall, adj, tot_cap;
< double wire_height;
< double epsilon0 = 8.8542e-12;
< double aspect_ratio, horiz_dielectric_constant, vert_dielectric_constant, miller_value,ild_thickness;
---
> double Wire::wire_cap (double len /* in m */, bool call_from_outside) {
> //TODO: this should be consistent with the wire_res in technology file
> double sidewall, adj, tot_cap;
> double wire_height;
> double epsilon0 = 8.8542e-12;
> double aspect_ratio;
> double horiz_dielectric_constant;
> double vert_dielectric_constant;
> double miller_value;
> double ild_thickness;
292,321c300,325
< switch (wire_placement)
< {
< case outside_mat:
< {
< aspect_ratio = g_tp.wire_outside_mat.aspect_ratio;
< horiz_dielectric_constant = g_tp.wire_outside_mat.horiz_dielectric_constant;
< vert_dielectric_constant = g_tp.wire_outside_mat.vert_dielectric_constant;
< miller_value = g_tp.wire_outside_mat.miller_value;
< ild_thickness = g_tp.wire_outside_mat.ild_thickness;
< break;
< }
< case inside_mat :
< {
< aspect_ratio = g_tp.wire_inside_mat.aspect_ratio;
< horiz_dielectric_constant = g_tp.wire_inside_mat.horiz_dielectric_constant;
< vert_dielectric_constant = g_tp.wire_inside_mat.vert_dielectric_constant;
< miller_value = g_tp.wire_inside_mat.miller_value;
< ild_thickness = g_tp.wire_inside_mat.ild_thickness;
< break;
< }
< default:
< {
< aspect_ratio = g_tp.wire_local.aspect_ratio;
< horiz_dielectric_constant = g_tp.wire_local.horiz_dielectric_constant;
< vert_dielectric_constant = g_tp.wire_local.vert_dielectric_constant;
< miller_value = g_tp.wire_local.miller_value;
< ild_thickness = g_tp.wire_local.ild_thickness;
< break;
< }
< }
---
> switch (wire_placement) {
> case outside_mat: {
> aspect_ratio = g_tp.wire_outside_mat.aspect_ratio;
> horiz_dielectric_constant = g_tp.wire_outside_mat.horiz_dielectric_constant;
> vert_dielectric_constant = g_tp.wire_outside_mat.vert_dielectric_constant;
> miller_value = g_tp.wire_outside_mat.miller_value;
> ild_thickness = g_tp.wire_outside_mat.ild_thickness;
> break;
> }
> case inside_mat : {
> aspect_ratio = g_tp.wire_inside_mat.aspect_ratio;
> horiz_dielectric_constant = g_tp.wire_inside_mat.horiz_dielectric_constant;
> vert_dielectric_constant = g_tp.wire_inside_mat.vert_dielectric_constant;
> miller_value = g_tp.wire_inside_mat.miller_value;
> ild_thickness = g_tp.wire_inside_mat.ild_thickness;
> break;
> }
> default: {
> aspect_ratio = g_tp.wire_local.aspect_ratio;
> horiz_dielectric_constant = g_tp.wire_local.horiz_dielectric_constant;
> vert_dielectric_constant = g_tp.wire_local.vert_dielectric_constant;
> miller_value = g_tp.wire_local.miller_value;
> ild_thickness = g_tp.wire_local.ild_thickness;
> break;
> }
> }
323,332c327,335
< if (call_from_outside)
< {
< wire_width *= 1e-6;
< wire_spacing *= 1e-6;
< }
< wire_height = wire_width/w_scale*aspect_ratio;
< /*
< * assuming height does not change. wire_width = width_original*w_scale
< * So wire_height does not change as wire width increases
< */
---
> if (call_from_outside) {
> wire_width *= 1e-6;
> wire_spacing *= 1e-6;
> }
> wire_height = wire_width / w_scale * aspect_ratio;
> /*
> * assuming height does not change. wire_width = width_original*w_scale
> * So wire_height does not change as wire width increases
> */
338,339c341,343
< sidewall = miller_value * horiz_dielectric_constant * (wire_height/wire_spacing)
< * epsilon0;
---
> sidewall = miller_value * horiz_dielectric_constant *
> (wire_height / wire_spacing)
> * epsilon0;
342,344c346,348
< // capacitance between wires in adjacent levels
< //adj = miller_value * vert_dielectric_constant *w_scale * epsilon0;
< //adj = 2*vert_dielectric_constant *wire_width/(ild_thickness*1e-6) * epsilon0;
---
> // capacitance between wires in adjacent levels
> //adj = miller_value * vert_dielectric_constant *w_scale * epsilon0;
> //adj = 2*vert_dielectric_constant *wire_width/(ild_thickness*1e-6) * epsilon0;
346,347c350,352
< adj = miller_value *vert_dielectric_constant *wire_width/(ild_thickness*1e-6) * epsilon0;
< //Change ild_thickness from micron to M
---
> adj = miller_value * vert_dielectric_constant * wire_width /
> (ild_thickness * 1e-6) * epsilon0;
> //Change ild_thickness from micron to M
349,350c354,355
< //tot_cap = (sidewall + adj + (deviceType->C_fringe * 1e6)); //F/m
< tot_cap = (sidewall + adj + (g_tp.fringe_cap * 1e6)); //F/m
---
> //tot_cap = (sidewall + adj + (deviceType->C_fringe * 1e6)); //F/m
> tot_cap = (sidewall + adj + (g_tp.fringe_cap * 1e6)); //F/m
352,357c357,361
< if (call_from_outside)
< {
< wire_width *= 1e6;
< wire_spacing *= 1e6;
< }
< return (tot_cap*len); // (F)
---
> if (call_from_outside) {
> wire_width *= 1e6;
> wire_spacing *= 1e6;
> }
> return (tot_cap*len); // (F)
361,363c365,366
< double
< Wire::wire_res (double len /*(in m)*/)
< {
---
> double
> Wire::wire_res (double len /*(in m)*/) {
365,367c368,373
< double aspect_ratio,alpha_scatter =1.05, dishing_thickness=0, barrier_thickness=0;
< //TODO: this should be consistent with the wire_res in technology file
< //The whole computation should be consistent with the wire_res in technology.cc too!
---
> double aspect_ratio;
> double alpha_scatter = 1.05;
> double dishing_thickness = 0;
> double barrier_thickness = 0;
> //TODO: this should be consistent with the wire_res in technology file
> //The whole computation should be consistent with the wire_res in technology.cc too!
369,388c375,392
< switch (wire_placement)
< {
< case outside_mat:
< {
< aspect_ratio = g_tp.wire_outside_mat.aspect_ratio;
< break;
< }
< case inside_mat :
< {
< aspect_ratio = g_tp.wire_inside_mat.aspect_ratio;
< break;
< }
< default:
< {
< aspect_ratio = g_tp.wire_local.aspect_ratio;
< break;
< }
< }
< return (alpha_scatter * resistivity * 1e-6 * len/((aspect_ratio*wire_width/w_scale-dishing_thickness - barrier_thickness)*
< (wire_width-2*barrier_thickness)));
---
> switch (wire_placement) {
> case outside_mat: {
> aspect_ratio = g_tp.wire_outside_mat.aspect_ratio;
> break;
> }
> case inside_mat : {
> aspect_ratio = g_tp.wire_inside_mat.aspect_ratio;
> break;
> }
> default: {
> aspect_ratio = g_tp.wire_local.aspect_ratio;
> break;
> }
> }
> return (alpha_scatter * resistivity * 1e-6 * len /
> ((aspect_ratio*wire_width / w_scale - dishing_thickness -
> barrier_thickness)*
> (wire_width - 2*barrier_thickness)));
398,402c402,405
< void
< Wire::low_swing_model()
< {
< double len = wire_length;
< double beta = pmos_to_nmos_sz_ratio();
---
> void
> Wire::low_swing_model() {
> double len = wire_length;
> double beta = pmos_to_nmos_sz_ratio();
405c408
< double inputrise = (in_rise_time == 0) ? signal_rise_time() : in_rise_time;
---
> double inputrise = (in_rise_time == 0) ? signal_rise_time() : in_rise_time;
407,419c410,422
< /* Final nmos low swing driver size calculation:
< * Try to size the driver such that the delay
< * is less than 8FO4.
< * If the driver size is greater than
< * the max allowable size, assume max size for the driver.
< * In either case, recalculate the delay using
< * the final driver size assuming slow input with
< * finite rise time instead of ideal step input
< *
< * (ref: Technical report 6)
< */
< double cwire = wire_cap(len); /* load capacitance */
< double rwire = wire_res(len);
---
> /* Final nmos low swing driver size calculation:
> * Try to size the driver such that the delay
> * is less than 8FO4.
> * If the driver size is greater than
> * the max allowable size, assume max size for the driver.
> * In either case, recalculate the delay using
> * the final driver size assuming slow input with
> * finite rise time instead of ideal step input
> *
> * (ref: Technical report 6)
> */
> double cwire = wire_cap(len); /* load capacitance */
> double rwire = wire_res(len);
423,424c426,427
< double driver_res = (-8*g_tp.FO4/(log(0.5) * cwire))/RES_ADJ;
< double nsize = R_to_w(driver_res, NCH);
---
> double driver_res = (-8 * g_tp.FO4 / (log(0.5) * cwire)) / RES_ADJ;
> double nsize = R_to_w(driver_res, NCH);
426,427c429,430
< nsize = MIN(nsize, g_tp.max_w_nmos_);
< nsize = MAX(nsize, g_tp.min_w_nmos_);
---
> nsize = MIN(nsize, g_tp.max_w_nmos_);
> nsize = MAX(nsize, g_tp.min_w_nmos_);
429,432c432,434
< if(rwire*cwire > 8*g_tp.FO4)
< {
< nsize = g_tp.max_w_nmos_;
< }
---
> if (rwire*cwire > 8*g_tp.FO4) {
> nsize = g_tp.max_w_nmos_;
> }
434,442c436,446
< // size the inverter appropriately to minimize the transmitter delay
< // Note - In order to minimize leakage, we are not adding a set of inverters to
< // bring down delay. Instead, we are sizing the single gate
< // based on the logical effort.
< double st_eff = sqrt((2+beta/1+beta)*gate_C(nsize, 0)/(gate_C(2*g_tp.min_w_nmos_, 0)
< + gate_C(2*min_w_pmos, 0)));
< double req_cin = ((2+beta/1+beta)*gate_C(nsize, 0))/st_eff;
< double inv_size = req_cin/(gate_C(min_w_pmos, 0) + gate_C(g_tp.min_w_nmos_, 0));
< inv_size = MAX(inv_size, 1);
---
> // size the inverter appropriately to minimize the transmitter delay
> // Note - In order to minimize leakage, we are not adding a set of inverters to
> // bring down delay. Instead, we are sizing the single gate
> // based on the logical effort.
> double st_eff = sqrt((2 + beta / 1 + beta) * gate_C(nsize, 0) /
> (gate_C(2 * g_tp.min_w_nmos_, 0)
> + gate_C(2 * min_w_pmos, 0)));
> double req_cin = ((2 + beta / 1 + beta) * gate_C(nsize, 0)) / st_eff;
> double inv_size = req_cin / (gate_C(min_w_pmos, 0) +
> gate_C(g_tp.min_w_nmos_, 0));
> inv_size = MAX(inv_size, 1);
444,449c448,453
< /* nand gate delay */
< double res_eq = (2 * tr_R_on(g_tp.min_w_nmos_, NCH, 1));
< double cap_eq = 2 * drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(2*g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< gate_C(inv_size*g_tp.min_w_nmos_, 0) +
< gate_C(inv_size*min_w_pmos, 0);
---
> /* nand gate delay */
> double res_eq = (2 * tr_R_on(g_tp.min_w_nmos_, NCH, 1));
> double cap_eq = 2 * drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(2 * g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> gate_C(inv_size * g_tp.min_w_nmos_, 0) +
> gate_C(inv_size * min_w_pmos, 0);
451c455
< double timeconst = res_eq * cap_eq;
---
> double timeconst = res_eq * cap_eq;
453,455c457,459
< delay = horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd,
< deviceType->Vth/deviceType->Vdd, RISE);
< double temp_power = cap_eq*deviceType->Vdd*deviceType->Vdd;
---
> delay = horowitz(inputrise, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, RISE);
> double temp_power = cap_eq * deviceType->Vdd * deviceType->Vdd;
457c461
< inputrise = delay / (deviceType->Vdd - deviceType->Vth); /* for the next stage */
---
> inputrise = delay / (deviceType->Vdd - deviceType->Vth); /* for the next stage */
459,468c463,472
< /* Inverter delay:
< * The load capacitance of this inv depends on
< * the gate capacitance of the final stage nmos
< * transistor which in turn depends on nsize
< */
< res_eq = tr_R_on(inv_size*min_w_pmos, PCH, 1);
< cap_eq = drain_C_(inv_size*min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(inv_size*g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< gate_C(nsize, 0);
< timeconst = res_eq * cap_eq;
---
> /* Inverter delay:
> * The load capacitance of this inv depends on
> * the gate capacitance of the final stage nmos
> * transistor which in turn depends on nsize
> */
> res_eq = tr_R_on(inv_size * min_w_pmos, PCH, 1);
> cap_eq = drain_C_(inv_size * min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(inv_size * g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> gate_C(nsize, 0);
> timeconst = res_eq * cap_eq;
470,472c474,476
< delay += horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd,
< deviceType->Vth/deviceType->Vdd, FALL);
< temp_power += cap_eq*deviceType->Vdd*deviceType->Vdd;
---
> delay += horowitz(inputrise, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, FALL);
> temp_power += cap_eq * deviceType->Vdd * deviceType->Vdd;
475,479c479,484
< transmitter.delay = delay;
< transmitter.power.readOp.dynamic = temp_power*2; /* since it is a diff. model*/
< transmitter.power.readOp.leakage = deviceType->Vdd *
< (4 * cmos_Isub_leakage(g_tp.min_w_nmos_, min_w_pmos, 2, nand) +
< 4 * cmos_Isub_leakage(g_tp.min_w_nmos_, min_w_pmos, 1, inv));
---
> transmitter.delay = delay;
> /* since it is a diff. model*/
> transmitter.power.readOp.dynamic = temp_power * 2;
> transmitter.power.readOp.leakage = deviceType->Vdd *
> (4 * cmos_Isub_leakage(g_tp.min_w_nmos_, min_w_pmos, 2, nand) +
> 4 * cmos_Isub_leakage(g_tp.min_w_nmos_, min_w_pmos, 1, inv));
481,483c486,488
< transmitter.power.readOp.gate_leakage = deviceType->Vdd *
< (4 * cmos_Ig_leakage(g_tp.min_w_nmos_, min_w_pmos, 2, nand) +
< 4 * cmos_Ig_leakage(g_tp.min_w_nmos_, min_w_pmos, 1, inv));
---
> transmitter.power.readOp.gate_leakage = deviceType->Vdd *
> (4 * cmos_Ig_leakage(g_tp.min_w_nmos_, min_w_pmos, 2, nand) +
> 4 * cmos_Ig_leakage(g_tp.min_w_nmos_, min_w_pmos, 1, inv));
485c490
< inputrise = delay / deviceType->Vth;
---
> inputrise = delay / deviceType->Vth;
487,500c492,505
< /* nmos delay + wire delay */
< cap_eq = cwire + drain_C_(nsize, NCH, 1, 1, g_tp.cell_h_def)*2 +
< nsense * sense_amp_input_cap(); //+receiver cap
< /*
< * NOTE: nmos is used as both pull up and pull down transistor
< * in the transmitter. This is because for low voltage swing, drive
< * resistance of nmos is less than pmos
< * (for a detailed graph ref: On-Chip Wires: Scaling and Efficiency)
< */
< timeconst = (tr_R_on(nsize, NCH, 1)*RES_ADJ) * (cwire +
< drain_C_(nsize, NCH, 1, 1, g_tp.cell_h_def)*2) +
< rwire*cwire/2 +
< (tr_R_on(nsize, NCH, 1)*RES_ADJ + rwire) *
< nsense * sense_amp_input_cap();
---
> /* nmos delay + wire delay */
> cap_eq = cwire + drain_C_(nsize, NCH, 1, 1, g_tp.cell_h_def) * 2 +
> nsense * sense_amp_input_cap(); //+receiver cap
> /*
> * NOTE: nmos is used as both pull up and pull down transistor
> * in the transmitter. This is because for low voltage swing, drive
> * resistance of nmos is less than pmos
> * (for a detailed graph ref: On-Chip Wires: Scaling and Efficiency)
> */
> timeconst = (tr_R_on(nsize, NCH, 1) * RES_ADJ) * (cwire +
> drain_C_(nsize, NCH, 1, 1, g_tp.cell_h_def) * 2) +
> rwire * cwire / 2 +
> (tr_R_on(nsize, NCH, 1) * RES_ADJ + rwire) *
> nsense * sense_amp_input_cap();
502,507c507,513
< /*
< * since we are pre-equalizing and overdriving the low
< * swing wires, the net time constant is less
< * than the actual value
< */
< delay += horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd, .25, 0);
---
> /*
> * since we are pre-equalizing and overdriving the low
> * swing wires, the net time constant is less
> * than the actual value
> */
> delay += horowitz(inputrise, timeconst, deviceType->Vth /
> deviceType->Vdd, .25, 0);
509,510c515,516
< temp_power += cap_eq*VOL_SWING*.400; /* .4v is the over drive voltage */
< temp_power *= 2; /* differential wire */
---
> temp_power += cap_eq * VOL_SWING * .400; /* .4v is the over drive voltage */
> temp_power *= 2; /* differential wire */
512,515c518,521
< l_wire.delay = delay - transmitter.delay;
< l_wire.power.readOp.dynamic = temp_power - transmitter.power.readOp.dynamic;
< l_wire.power.readOp.leakage = deviceType->Vdd*
< (4* cmos_Isub_leakage(nsize, 0, 1, nmos));
---
> l_wire.delay = delay - transmitter.delay;
> l_wire.power.readOp.dynamic = temp_power - transmitter.power.readOp.dynamic;
> l_wire.power.readOp.leakage = deviceType->Vdd *
> (4 * cmos_Isub_leakage(nsize, 0, 1, nmos));
517,518c523,524
< l_wire.power.readOp.gate_leakage = deviceType->Vdd*
< (4* cmos_Ig_leakage(nsize, 0, 1, nmos));
---
> l_wire.power.readOp.gate_leakage = deviceType->Vdd *
> (4 * cmos_Ig_leakage(nsize, 0, 1, nmos));
520,521c526,527
< //double rt = horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd,
< // deviceType->Vth/deviceType->Vdd, RISE)/deviceType->Vth;
---
> //double rt = horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd,
> // deviceType->Vth/deviceType->Vdd, RISE)/deviceType->Vth;
523c529
< delay += g_tp.sense_delay;
---
> delay += g_tp.sense_delay;
525,529c531,535
< sense_amp.delay = g_tp.sense_delay;
< out_rise_time = g_tp.sense_delay/(deviceType->Vth);
< sense_amp.power.readOp.dynamic = g_tp.sense_dy_power;
< sense_amp.power.readOp.leakage = 0; //FIXME
< sense_amp.power.readOp.gate_leakage = 0;
---
> sense_amp.delay = g_tp.sense_delay;
> out_rise_time = g_tp.sense_delay / (deviceType->Vth);
> sense_amp.power.readOp.dynamic = g_tp.sense_dy_power;
> sense_amp.power.readOp.leakage = 0; //FIXME
> sense_amp.power.readOp.gate_leakage = 0;
531,537c537,543
< power.readOp.dynamic = temp_power + sense_amp.power.readOp.dynamic;
< power.readOp.leakage = transmitter.power.readOp.leakage +
< l_wire.power.readOp.leakage +
< sense_amp.power.readOp.leakage;
< power.readOp.gate_leakage = transmitter.power.readOp.gate_leakage +
< l_wire.power.readOp.gate_leakage +
< sense_amp.power.readOp.gate_leakage;
---
> power.readOp.dynamic = temp_power + sense_amp.power.readOp.dynamic;
> power.readOp.leakage = transmitter.power.readOp.leakage +
> l_wire.power.readOp.leakage +
> sense_amp.power.readOp.leakage;
> power.readOp.gate_leakage = transmitter.power.readOp.gate_leakage +
> l_wire.power.readOp.gate_leakage +
> sense_amp.power.readOp.gate_leakage;
540,546c546,551
< double
< Wire::sense_amp_input_cap()
< {
< return drain_C_(g_tp.w_iso, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(g_tp.w_sense_en + g_tp.w_sense_n, 0) +
< drain_C_(g_tp.w_sense_n, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(g_tp.w_sense_p, PCH, 1, 1, g_tp.cell_h_def);
---
> double
> Wire::sense_amp_input_cap() {
> return drain_C_(g_tp.w_iso, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(g_tp.w_sense_en + g_tp.w_sense_n, 0) +
> drain_C_(g_tp.w_sense_n, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(g_tp.w_sense_p, PCH, 1, 1, g_tp.cell_h_def);
550,559c555,563
< void Wire::delay_optimal_wire ()
< {
< double len = wire_length;
< //double min_wire_width = wire_width; //m
< double beta = pmos_to_nmos_sz_ratio();
< double switching = 0; // switching energy
< double short_ckt = 0; // short-circuit energy
< double tc = 0; // time constant
< // input cap of min sized driver
< double input_cap = gate_C(g_tp.min_w_nmos_ + min_w_pmos, 0);
---
> void Wire::delay_optimal_wire () {
> double len = wire_length;
> //double min_wire_width = wire_width; //m
> double beta = pmos_to_nmos_sz_ratio();
> double switching = 0; // switching energy
> double short_ckt = 0; // short-circuit energy
> double tc = 0; // time constant
> // input cap of min sized driver
> double input_cap = gate_C(g_tp.min_w_nmos_ + min_w_pmos, 0);
561,568c565,572
< // output parasitic capacitance of
< // the min. sized driver
< double out_cap = drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def);
< // drive resistance
< double out_res = (tr_R_on(g_tp.min_w_nmos_, NCH, 1) +
< tr_R_on(min_w_pmos, PCH, 1))/2;
< double wr = wire_res(len); //ohm
---
> // output parasitic capacitance of
> // the min. sized driver
> double out_cap = drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def);
> // drive resistance
> double out_res = (tr_R_on(g_tp.min_w_nmos_, NCH, 1) +
> tr_R_on(min_w_pmos, PCH, 1)) / 2;
> double wr = wire_res(len); //ohm
570,571c574,575
< // wire cap /m
< double wc = wire_cap(len);
---
> // wire cap /m
> double wc = wire_cap(len);
573,574c577,579
< // size the repeater such that the delay of the wire is minimum
< double repeater_scaling = sqrt(out_res*wc/(wr*input_cap)); // len will cancel
---
> // size the repeater such that the delay of the wire is minimum
> // len will cancel
> double repeater_scaling = sqrt(out_res * wc / (wr * input_cap));
576c581
< // calc the optimum spacing between the repeaters (m)
---
> // calc the optimum spacing between the repeaters (m)
578,580c583,585
< repeater_spacing = sqrt(2 * out_res * (out_cap + input_cap)/
< ((wr/len)*(wc/len)));
< repeater_size = repeater_scaling;
---
> repeater_spacing = sqrt(2 * out_res * (out_cap + input_cap) /
> ((wr / len) * (wc / len)));
> repeater_size = repeater_scaling;
582,583c587,589
< switching = (repeater_scaling * (input_cap + out_cap) +
< repeater_spacing * (wc/len)) * deviceType->Vdd * deviceType->Vdd;
---
> switching = (repeater_scaling * (input_cap + out_cap) +
> repeater_spacing * (wc / len)) * deviceType->Vdd *
> deviceType->Vdd;
585,588c591,594
< tc = out_res * (input_cap + out_cap) +
< out_res * wc/len * repeater_spacing/repeater_scaling +
< wr/len * repeater_spacing * input_cap * repeater_scaling +
< 0.5 * (wr/len) * (wc/len)* repeater_spacing * repeater_spacing;
---
> tc = out_res * (input_cap + out_cap) +
> out_res * wc / len * repeater_spacing / repeater_scaling +
> wr / len * repeater_spacing * input_cap * repeater_scaling +
> 0.5 * (wr / len) * (wc / len) * repeater_spacing * repeater_spacing;
590c596
< delay = 0.693 * tc * len/repeater_spacing;
---
> delay = 0.693 * tc * len / repeater_spacing;
593,594c599,600
< short_ckt = deviceType->Vdd * g_tp.min_w_nmos_ * Ishort_ckt * 1.0986 *
< repeater_scaling * tc;
---
> short_ckt = deviceType->Vdd * g_tp.min_w_nmos_ * Ishort_ckt * 1.0986 *
> repeater_scaling * tc;
596,605c602,618
< area.set_area((len/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_scaling,
< g_tp.min_w_nmos_ * repeater_scaling, g_tp.cell_h_def));
< power.readOp.dynamic = ((len/repeater_spacing)*(switching + short_ckt));
< power.readOp.leakage = ((len/repeater_spacing)*
< deviceType->Vdd*
< cmos_Isub_leakage(g_tp.min_w_nmos_*repeater_scaling, beta*g_tp.min_w_nmos_*repeater_scaling, 1, inv));
< power.readOp.gate_leakage = ((len/repeater_spacing)*
< deviceType->Vdd*
< cmos_Ig_leakage(g_tp.min_w_nmos_*repeater_scaling, beta*g_tp.min_w_nmos_*repeater_scaling, 1, inv));
---
> area.set_area((len / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_scaling,
> g_tp.min_w_nmos_ * repeater_scaling,
> g_tp.cell_h_def));
> power.readOp.dynamic = ((len / repeater_spacing) * (switching + short_ckt));
> power.readOp.leakage = ((len / repeater_spacing) *
> deviceType->Vdd *
> cmos_Isub_leakage(g_tp.min_w_nmos_ *
> repeater_scaling, beta *
> g_tp.min_w_nmos_ *
> repeater_scaling, 1, inv));
> power.readOp.gate_leakage = ((len / repeater_spacing) *
> deviceType->Vdd *
> cmos_Ig_leakage(g_tp.min_w_nmos_ *
> repeater_scaling, beta *
> g_tp.min_w_nmos_ *
> repeater_scaling, 1, inv));
612,614c625,627
< Wire::init_wire(){
< wire_length = 1;
< delay_optimal_wire();
---
> Wire::init_wire() {
> wire_length = 1;
> delay_optimal_wire();
616,619c629,632
< powerDef pow;
< si = repeater_size;
< sp = repeater_spacing;
< sp *= 1e6; // in microns
---
> powerDef pow;
> si = repeater_size;
> sp = repeater_spacing;
> sp *= 1e6; // in microns
621,631c634,644
< double i, j, del;
< repeated_wire.push_back(Component());
< for (j=sp; j < 4*sp; j+=100) {
< for (i = si; i > 1; i--) {
< pow = wire_model(j*1e-6, i, &del);
< if (j == sp && i == si) {
< global.delay = del;
< global.power = pow;
< global.area.h = si;
< global.area.w = sp*1e-6; // m
< }
---
> double i, j, del;
> repeated_wire.push_back(Component());
> for (j = sp; j < 4*sp; j += 100) {
> for (i = si; i > 1; i--) {
> pow = wire_model(j * 1e-6, i, &del);
> if (j == sp && i == si) {
> global.delay = del;
> global.power = pow;
> global.area.h = si;
> global.area.w = sp * 1e-6; // m
> }
637,641c650,654
< repeated_wire.back().delay = del;
< repeated_wire.back().power.readOp = pow.readOp;
< repeated_wire.back().area.w = j*1e-6; //m
< repeated_wire.back().area.h = i;
< repeated_wire.push_back(Component());
---
> repeated_wire.back().delay = del;
> repeated_wire.back().power.readOp = pow.readOp;
> repeated_wire.back().area.w = j * 1e-6; //m
> repeated_wire.back().area.h = i;
> repeated_wire.push_back(Component());
642a656
> }
644,650c658,663
< }
< repeated_wire.pop_back();
< update_fullswing();
< Wire *l_wire = new Wire(Low_swing, 0.001/* 1 mm*/, 1);
< low_swing.delay = l_wire->delay;
< low_swing.power = l_wire->power;
< delete l_wire;
---
> repeated_wire.pop_back();
> update_fullswing();
> Wire *l_wire = new Wire(Low_swing, 0.001/* 1 mm*/, 1);
> low_swing.delay = l_wire->delay;
> low_swing.power = l_wire->power;
> delete l_wire;
655,656c668
< void Wire::update_fullswing()
< {
---
> void Wire::update_fullswing() {
658,702c670,712
< list<Component>::iterator citer;
< double del[4];
< del[3] = this->global.delay + this->global.delay*.3;
< del[2] = global.delay + global.delay*.2;
< del[1] = global.delay + global.delay*.1;
< del[0] = global.delay + global.delay*.05;
< double threshold;
< double ncost;
< double cost;
< int i = 4;
< while (i>0) {
< threshold = del[i-1];
< cost = BIGNUM;
< for (citer = repeated_wire.begin(); citer != repeated_wire.end(); citer++)
< {
< if (citer->delay > threshold) {
< citer = repeated_wire.erase(citer);
< citer --;
< }
< else {
< ncost = citer->power.readOp.dynamic/global.power.readOp.dynamic +
< citer->power.readOp.leakage/global.power.readOp.leakage;
< if(ncost < cost)
< {
< cost = ncost;
< if (i == 4) {
< global_30.delay = citer->delay;
< global_30.power = citer->power;
< global_30.area = citer->area;
< }
< else if (i==3) {
< global_20.delay = citer->delay;
< global_20.power = citer->power;
< global_20.area = citer->area;
< }
< else if(i==2) {
< global_10.delay = citer->delay;
< global_10.power = citer->power;
< global_10.area = citer->area;
< }
< else if(i==1) {
< global_5.delay = citer->delay;
< global_5.power = citer->power;
< global_5.area = citer->area;
< }
---
> list<Component>::iterator citer;
> double del[4];
> del[3] = this->global.delay + this->global.delay * .3;
> del[2] = global.delay + global.delay * .2;
> del[1] = global.delay + global.delay * .1;
> del[0] = global.delay + global.delay * .05;
> double threshold;
> double ncost;
> double cost;
> int i = 4;
> while (i > 0) {
> threshold = del[i-1];
> cost = BIGNUM;
> for (citer = repeated_wire.begin(); citer != repeated_wire.end();
> citer++) {
> if (citer->delay > threshold) {
> citer = repeated_wire.erase(citer);
> citer --;
> } else {
> ncost = citer->power.readOp.dynamic /
> global.power.readOp.dynamic +
> citer->power.readOp.leakage / global.power.readOp.leakage;
> if (ncost < cost) {
> cost = ncost;
> if (i == 4) {
> global_30.delay = citer->delay;
> global_30.power = citer->power;
> global_30.area = citer->area;
> } else if (i == 3) {
> global_20.delay = citer->delay;
> global_20.power = citer->power;
> global_20.area = citer->area;
> } else if (i == 2) {
> global_10.delay = citer->delay;
> global_10.power = citer->power;
> global_10.area = citer->area;
> } else if (i == 1) {
> global_5.delay = citer->delay;
> global_5.power = citer->power;
> global_5.area = citer->area;
> }
> }
> }
704c714
< }
---
> i--;
706,707d715
< i--;
< }
712,726c720,733
< powerDef Wire::wire_model (double space, double size, double *delay)
< {
< powerDef ptemp;
< double len = 1;
< //double min_wire_width = wire_width; //m
< double beta = pmos_to_nmos_sz_ratio();
< // switching energy
< double switching = 0;
< // short-circuit energy
< double short_ckt = 0;
< // time constant
< double tc = 0;
< // input cap of min sized driver
< double input_cap = gate_C (g_tp.min_w_nmos_ +
< min_w_pmos, 0);
---
> powerDef Wire::wire_model (double space, double size, double *delay) {
> powerDef ptemp;
> double len = 1;
> //double min_wire_width = wire_width; //m
> double beta = pmos_to_nmos_sz_ratio();
> // switching energy
> double switching = 0;
> // short-circuit energy
> double short_ckt = 0;
> // time constant
> double tc = 0;
> // input cap of min sized driver
> double input_cap = gate_C (g_tp.min_w_nmos_ +
> min_w_pmos, 0);
728,735c735,742
< // output parasitic capacitance of
< // the min. sized driver
< double out_cap = drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def);
< // drive resistance
< double out_res = (tr_R_on(g_tp.min_w_nmos_, NCH, 1) +
< tr_R_on(min_w_pmos, PCH, 1))/2;
< double wr = wire_res(len); //ohm
---
> // output parasitic capacitance of
> // the min. sized driver
> double out_cap = drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def);
> // drive resistance
> double out_res = (tr_R_on(g_tp.min_w_nmos_, NCH, 1) +
> tr_R_on(min_w_pmos, PCH, 1)) / 2;
> double wr = wire_res(len); //ohm
737,738c744,745
< // wire cap /m
< double wc = wire_cap(len);
---
> // wire cap /m
> double wc = wire_cap(len);
740,741c747,748
< repeater_spacing = space;
< repeater_size = size;
---
> repeater_spacing = space;
> repeater_size = size;
743,744c750,752
< switching = (repeater_size * (input_cap + out_cap) +
< repeater_spacing * (wc/len)) * deviceType->Vdd * deviceType->Vdd;
---
> switching = (repeater_size * (input_cap + out_cap) +
> repeater_spacing * (wc / len)) * deviceType->Vdd *
> deviceType->Vdd;
746,749c754,757
< tc = out_res * (input_cap + out_cap) +
< out_res * wc/len * repeater_spacing/repeater_size +
< wr/len * repeater_spacing * out_cap * repeater_size +
< 0.5 * (wr/len) * (wc/len)* repeater_spacing * repeater_spacing;
---
> tc = out_res * (input_cap + out_cap) +
> out_res * wc / len * repeater_spacing / repeater_size +
> wr / len * repeater_spacing * out_cap * repeater_size +
> 0.5 * (wr / len) * (wc / len) * repeater_spacing * repeater_spacing;
751c759
< *delay = 0.693 * tc * len/repeater_spacing;
---
> *delay = 0.693 * tc * len / repeater_spacing;
754,755c762,763
< short_ckt = deviceType->Vdd * g_tp.min_w_nmos_ * Ishort_ckt * 1.0986 *
< repeater_size * tc;
---
> short_ckt = deviceType->Vdd * g_tp.min_w_nmos_ * Ishort_ckt * 1.0986 *
> repeater_size * tc;
757,760c765,771
< ptemp.readOp.dynamic = ((len/repeater_spacing)*(switching + short_ckt));
< ptemp.readOp.leakage = ((len/repeater_spacing)*
< deviceType->Vdd*
< cmos_Isub_leakage(g_tp.min_w_nmos_*repeater_size, beta*g_tp.min_w_nmos_*repeater_size, 1, inv));
---
> ptemp.readOp.dynamic = ((len / repeater_spacing) * (switching + short_ckt));
> ptemp.readOp.leakage = ((len / repeater_spacing) *
> deviceType->Vdd *
> cmos_Isub_leakage(g_tp.min_w_nmos_ *
> repeater_size, beta *
> g_tp.min_w_nmos_ *
> repeater_size, 1, inv));
762,764c773,778
< ptemp.readOp.gate_leakage = ((len/repeater_spacing)*
< deviceType->Vdd*
< cmos_Ig_leakage(g_tp.min_w_nmos_*repeater_size, beta*g_tp.min_w_nmos_*repeater_size, 1, inv));
---
> ptemp.readOp.gate_leakage = ((len / repeater_spacing) *
> deviceType->Vdd *
> cmos_Ig_leakage(g_tp.min_w_nmos_ *
> repeater_size, beta *
> g_tp.min_w_nmos_ *
> repeater_size, 1, inv));
766c780
< return ptemp;
---
> return ptemp;
770,771c784
< Wire::print_wire()
< {
---
> Wire::print_wire() {
773,782c786,796
< cout << "\nWire Properties:\n\n";
< cout << " Delay Optimal\n\tRepeater size - "<< global.area.h <<
< " \n\tRepeater spacing - " << global.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global.delay*1e6 << " (ns/mm)"
< " \n\tPowerD - " << global.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
---
> cout << "\nWire Properties:\n\n";
> cout << " Delay Optimal\n\tRepeater size - " << global.area.h <<
> " \n\tRepeater spacing - " << global.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global.delay*1e6 << " (ns/mm)"
> " \n\tPowerD - " << global.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
784,829c798,851
< cout << " 5% Overhead\n\tRepeater size - "<< global_5.area.h <<
< " \n\tRepeater spacing - " << global_5.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global_5.delay *1e6<< " (ns/mm)"
< " \n\tPowerD - " << global_5.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global_5.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global_5.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
< cout << " 10% Overhead\n\tRepeater size - "<< global_10.area.h <<
< " \n\tRepeater spacing - " << global_10.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global_10.delay *1e6<< " (ns/mm)"
< " \n\tPowerD - " << global_10.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global_10.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global_10.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
< cout << " 20% Overhead\n\tRepeater size - "<< global_20.area.h <<
< " \n\tRepeater spacing - " << global_20.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global_20.delay *1e6<< " (ns/mm)"
< " \n\tPowerD - " << global_20.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global_20.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global_20.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
< cout << " 30% Overhead\n\tRepeater size - "<< global_30.area.h <<
< " \n\tRepeater spacing - " << global_30.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global_30.delay *1e6<< " (ns/mm)"
< " \n\tPowerD - " << global_30.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global_30.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global_30.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
< cout << " Low-swing wire (1 mm) - Note: Unlike repeated wires, \n\tdelay and power "
< "values of low-swing wires do not\n\thave a linear relationship with length." <<
< " \n\tdelay - " << low_swing.delay *1e9<< " (ns)"
< " \n\tpowerD - " << low_swing.power.readOp.dynamic *1e9<< " (nJ)"
< " \n\tPowerL - " << low_swing.power.readOp.leakage << " (mW)"
< " \n\tPowerLgate - " << low_swing.power.readOp.gate_leakage << " (mW)\n";
< cout << "\tWire width - " <<wire_width_init * 2 /* differential */<< " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init * 2 /* differential */<< " microns\n";
< cout <<endl;
< cout <<endl;
---
> cout << " 5% Overhead\n\tRepeater size - " << global_5.area.h <<
> " \n\tRepeater spacing - " << global_5.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global_5.delay *1e6 << " (ns/mm)"
> " \n\tPowerD - " << global_5.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global_5.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global_5.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
> cout << " 10% Overhead\n\tRepeater size - " << global_10.area.h <<
> " \n\tRepeater spacing - " << global_10.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global_10.delay *1e6 << " (ns/mm)"
> " \n\tPowerD - " << global_10.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global_10.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global_10.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
> cout << " 20% Overhead\n\tRepeater size - " << global_20.area.h <<
> " \n\tRepeater spacing - " << global_20.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global_20.delay *1e6 << " (ns/mm)"
> " \n\tPowerD - " << global_20.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global_20.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global_20.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
> cout << " 30% Overhead\n\tRepeater size - " << global_30.area.h <<
> " \n\tRepeater spacing - " << global_30.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global_30.delay *1e6 << " (ns/mm)"
> " \n\tPowerD - " << global_30.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global_30.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global_30.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
> cout << " Low-swing wire (1 mm) - Note: Unlike repeated wires, \n\t" <<
> "delay and power values of low-swing wires do not\n\t" <<
> "have a linear relationship with length." <<
> " \n\tdelay - " << low_swing.delay *1e9 << " (ns)"
> " \n\tpowerD - " << low_swing.power.readOp.dynamic *1e9 << " (nJ)"
> " \n\tPowerL - " << low_swing.power.readOp.leakage << " (mW)"
> " \n\tPowerLgate - " << low_swing.power.readOp.gate_leakage <<
> " (mW)\n";
> cout << "\tWire width - " << wire_width_init * 2 /* differential */ <<
> " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init * 2 /* differential */ <<
> " microns\n";
> cout << endl;
> cout << endl;
> * Copyright (c) 2010-2013 Advanced Micro Devices, Inc.
28c29
< * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.”
---
> * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
44,64c45,65
< ):wt(wire_model), wire_length(wl*1e-6), nsense(n), w_scale(w_s), s_scale(s_s),
< resistivity(resistivity), deviceType(dt)
< {
< wire_placement = wp;
< min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio*g_tp.min_w_nmos_;
< in_rise_time = 0;
< out_rise_time = 0;
< if (initialized != 1) {
< cout << "Wire not initialized. Initializing it with default values\n";
< Wire winit;
< }
< calculate_wire_stats();
< // change everything back to seconds, microns, and Joules
< repeater_spacing *= 1e6;
< wire_length *= 1e6;
< wire_width *= 1e6;
< wire_spacing *= 1e6;
< assert(wire_length > 0);
< assert(power.readOp.dynamic > 0);
< assert(power.readOp.leakage > 0);
< assert(power.readOp.gate_leakage > 0);
---
> ): wt(wire_model), wire_length(wl*1e-6), nsense(n), w_scale(w_s),
> s_scale(s_s),
> resistivity(resistivity), deviceType(dt) {
> wire_placement = wp;
> min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio * g_tp.min_w_nmos_;
> in_rise_time = 0;
> out_rise_time = 0;
> if (initialized != 1) {
> cout << "Wire not initialized. Initializing it with default values\n";
> Wire winit;
> }
> calculate_wire_stats();
> // change everything back to seconds, microns, and Joules
> repeater_spacing *= 1e6;
> wire_length *= 1e6;
> wire_width *= 1e6;
> wire_spacing *= 1e6;
> assert(wire_length > 0);
> assert(power.readOp.dynamic > 0);
> assert(power.readOp.leakage > 0);
> assert(power.readOp.gate_leakage > 0);
67,74c68,75
< // the following values are for peripheral global technology
< // specified in the input config file
< Component Wire::global;
< Component Wire::global_5;
< Component Wire::global_10;
< Component Wire::global_20;
< Component Wire::global_30;
< Component Wire::low_swing;
---
> // the following values are for peripheral global technology
> // specified in the input config file
> Component Wire::global;
> Component Wire::global_5;
> Component Wire::global_10;
> Component Wire::global_20;
> Component Wire::global_30;
> Component Wire::low_swing;
76,78c77,79
< int Wire::initialized;
< double Wire::wire_width_init;
< double Wire::wire_spacing_init;
---
> int Wire::initialized;
> double Wire::wire_width_init;
> double Wire::wire_spacing_init;
81,90c82,91
< Wire::Wire(double w_s, double s_s, enum Wire_placement wp, double resis, TechnologyParameter::DeviceType *dt)
< {
< w_scale = w_s;
< s_scale = s_s;
< deviceType = dt;
< wire_placement = wp;
< resistivity = resis;
< min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio * g_tp.min_w_nmos_;
< in_rise_time = 0;
< out_rise_time = 0;
---
> Wire::Wire(double w_s, double s_s, enum Wire_placement wp, double resis,
> TechnologyParameter::DeviceType *dt) {
> w_scale = w_s;
> s_scale = s_s;
> deviceType = dt;
> wire_placement = wp;
> resistivity = resis;
> min_w_pmos = deviceType->n_to_p_eff_curr_drv_ratio * g_tp.min_w_nmos_;
> in_rise_time = 0;
> out_rise_time = 0;
92,97c93,103
< switch (wire_placement)
< {
< case outside_mat: wire_width = g_tp.wire_outside_mat.pitch; break;
< case inside_mat : wire_width = g_tp.wire_inside_mat.pitch; break;
< default: wire_width = g_tp.wire_local.pitch; break;
< }
---
> switch (wire_placement) {
> case outside_mat:
> wire_width = g_tp.wire_outside_mat.pitch;
> break;
> case inside_mat :
> wire_width = g_tp.wire_inside_mat.pitch;
> break;
> default:
> wire_width = g_tp.wire_local.pitch;
> break;
> }
99c105
< wire_spacing = wire_width;
---
> wire_spacing = wire_width;
101,102c107,108
< wire_width *= (w_scale * 1e-6/2) /* (m) */;
< wire_spacing *= (s_scale * 1e-6/2) /* (m) */;
---
> wire_width *= (w_scale * 1e-6 / 2) /* (m) */;
> wire_spacing *= (s_scale * 1e-6 / 2) /* (m) */;
104,107c110,113
< initialized = 1;
< init_wire();
< wire_width_init = wire_width;
< wire_spacing_init = wire_spacing;
---
> initialized = 1;
> init_wire();
> wire_width_init = wire_width;
> wire_spacing_init = wire_spacing;
109,111c115,117
< assert(power.readOp.dynamic > 0);
< assert(power.readOp.leakage > 0);
< assert(power.readOp.gate_leakage > 0);
---
> assert(power.readOp.dynamic > 0);
> assert(power.readOp.leakage > 0);
> assert(power.readOp.gate_leakage > 0);
116,117c122
< Wire::~Wire()
< {
---
> Wire::~Wire() {
123,124c128
< Wire::calculate_wire_stats()
< {
---
> Wire::calculate_wire_stats() {
126,134c130,136
< if (wire_placement == outside_mat) {
< wire_width = g_tp.wire_outside_mat.pitch;
< }
< else if (wire_placement == inside_mat) {
< wire_width = g_tp.wire_inside_mat.pitch;
< }
< else {
< wire_width = g_tp.wire_local.pitch;
< }
---
> if (wire_placement == outside_mat) {
> wire_width = g_tp.wire_outside_mat.pitch;
> } else if (wire_placement == inside_mat) {
> wire_width = g_tp.wire_inside_mat.pitch;
> } else {
> wire_width = g_tp.wire_local.pitch;
> }
136c138
< wire_spacing = wire_width;
---
> wire_spacing = wire_width;
138,139c140,141
< wire_width *= (w_scale * 1e-6/2) /* (m) */;
< wire_spacing *= (s_scale * 1e-6/2) /* (m) */;
---
> wire_width *= (w_scale * 1e-6 / 2) /* (m) */;
> wire_spacing *= (s_scale * 1e-6 / 2) /* (m) */;
142c144
< if (wt != Low_swing) {
---
> if (wt != Low_swing) {
144c146
< // delay_optimal_wire();
---
> // delay_optimal_wire();
146,210c148,211
< if (wt == Global) {
< delay = global.delay * wire_length;
< power.readOp.dynamic = global.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global.area.w;
< repeater_size = global.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< else if (wt == Global_5) {
< delay = global_5.delay * wire_length;
< power.readOp.dynamic = global_5.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global_5.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global_5.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global_5.area.w;
< repeater_size = global_5.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< else if (wt == Global_10) {
< delay = global_10.delay * wire_length;
< power.readOp.dynamic = global_10.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global_10.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global_10.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global_10.area.w;
< repeater_size = global_10.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< else if (wt == Global_20) {
< delay = global_20.delay * wire_length;
< power.readOp.dynamic = global_20.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global_20.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global_20.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global_20.area.w;
< repeater_size = global_20.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< else if (wt == Global_30) {
< delay = global_30.delay * wire_length;
< power.readOp.dynamic = global_30.power.readOp.dynamic * wire_length;
< power.readOp.leakage = global_30.power.readOp.leakage * wire_length;
< power.readOp.gate_leakage = global_30.power.readOp.gate_leakage * wire_length;
< repeater_spacing = global_30.area.w;
< repeater_size = global_30.area.h;
< area.set_area((wire_length/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_size,
< g_tp.min_w_nmos_ * repeater_size, g_tp.cell_h_def));
< }
< out_rise_time = delay*repeater_spacing/deviceType->Vth;
< }
< else if (wt == Low_swing) {
< low_swing_model ();
< repeater_spacing = wire_length;
< repeater_size = 1;
< }
< else {
< assert(0);
< }
---
> if (wt == Global) {
> delay = global.delay * wire_length;
> power.readOp.dynamic = global.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global.area.w;
> repeater_size = global.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> } else if (wt == Global_5) {
> delay = global_5.delay * wire_length;
> power.readOp.dynamic = global_5.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global_5.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global_5.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global_5.area.w;
> repeater_size = global_5.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> } else if (wt == Global_10) {
> delay = global_10.delay * wire_length;
> power.readOp.dynamic = global_10.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global_10.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global_10.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global_10.area.w;
> repeater_size = global_10.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> } else if (wt == Global_20) {
> delay = global_20.delay * wire_length;
> power.readOp.dynamic = global_20.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global_20.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global_20.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global_20.area.w;
> repeater_size = global_20.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> } else if (wt == Global_30) {
> delay = global_30.delay * wire_length;
> power.readOp.dynamic = global_30.power.readOp.dynamic * wire_length;
> power.readOp.leakage = global_30.power.readOp.leakage * wire_length;
> power.readOp.gate_leakage = global_30.power.readOp.gate_leakage * wire_length;
> repeater_spacing = global_30.area.w;
> repeater_size = global_30.area.h;
> area.set_area((wire_length / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_size,
> g_tp.min_w_nmos_ * repeater_size,
> g_tp.cell_h_def));
> }
> out_rise_time = delay * repeater_spacing / deviceType->Vth;
> } else if (wt == Low_swing) {
> low_swing_model ();
> repeater_spacing = wire_length;
> repeater_size = 1;
> } else {
> assert(0);
> }
221,223c222,223
< double
< Wire::signal_fall_time ()
< {
---
> double
> Wire::signal_fall_time () {
225,229c225,229
< /* rise time of inverter 1's output */
< double rt;
< /* fall time of inverter 2's output */
< double ft;
< double timeconst;
---
> /* rise time of inverter 1's output */
> double rt;
> /* fall time of inverter 2's output */
> double ft;
> double timeconst;
231,241c231,244
< timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
< tr_R_on(min_w_pmos, PCH, 1);
< rt = horowitz (0, timeconst, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, FALL) / (deviceType->Vdd - deviceType->Vth);
< timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
< tr_R_on(g_tp.min_w_nmos_, NCH, 1);
< ft = horowitz (rt, timeconst, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, RISE) / deviceType->Vth;
< return ft;
---
> timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
> tr_R_on(min_w_pmos, PCH, 1);
> rt = horowitz (0, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, FALL) /
> (deviceType->Vdd - deviceType->Vth);
> timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
> tr_R_on(g_tp.min_w_nmos_, NCH, 1);
> ft = horowitz (rt, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, RISE) / deviceType->Vth;
> return ft;
246,247c249
< double Wire::signal_rise_time ()
< {
---
> double Wire::signal_rise_time () {
249,253c251,255
< /* rise time of inverter 1's output */
< double ft;
< /* fall time of inverter 2's output */
< double rt;
< double timeconst;
---
> /* rise time of inverter 1's output */
> double ft;
> /* fall time of inverter 2's output */
> double rt;
> double timeconst;
255,265c257,270
< timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
< tr_R_on(g_tp.min_w_nmos_, NCH, 1);
< rt = horowitz (0, timeconst, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, RISE) / deviceType->Vth;
< timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
< tr_R_on(min_w_pmos, PCH, 1);
< ft = horowitz (rt, timeconst, deviceType->Vth/deviceType->Vdd, deviceType->Vth/deviceType->Vdd, FALL) / (deviceType->Vdd - deviceType->Vth);
< return ft; //sec
---
> timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
> tr_R_on(g_tp.min_w_nmos_, NCH, 1);
> rt = horowitz (0, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, RISE) / deviceType->Vth;
> timeconst = (drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(min_w_pmos + g_tp.min_w_nmos_, 0)) *
> tr_R_on(min_w_pmos, PCH, 1);
> ft = horowitz (rt, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, FALL) /
> (deviceType->Vdd - deviceType->Vth);
> return ft; //sec
284,290c289,298
< double Wire::wire_cap (double len /* in m */, bool call_from_outside)
< {
< //TODO: this should be consistent with the wire_res in technology file
< double sidewall, adj, tot_cap;
< double wire_height;
< double epsilon0 = 8.8542e-12;
< double aspect_ratio, horiz_dielectric_constant, vert_dielectric_constant, miller_value,ild_thickness;
---
> double Wire::wire_cap (double len /* in m */, bool call_from_outside) {
> //TODO: this should be consistent with the wire_res in technology file
> double sidewall, adj, tot_cap;
> double wire_height;
> double epsilon0 = 8.8542e-12;
> double aspect_ratio;
> double horiz_dielectric_constant;
> double vert_dielectric_constant;
> double miller_value;
> double ild_thickness;
292,321c300,325
< switch (wire_placement)
< {
< case outside_mat:
< {
< aspect_ratio = g_tp.wire_outside_mat.aspect_ratio;
< horiz_dielectric_constant = g_tp.wire_outside_mat.horiz_dielectric_constant;
< vert_dielectric_constant = g_tp.wire_outside_mat.vert_dielectric_constant;
< miller_value = g_tp.wire_outside_mat.miller_value;
< ild_thickness = g_tp.wire_outside_mat.ild_thickness;
< break;
< }
< case inside_mat :
< {
< aspect_ratio = g_tp.wire_inside_mat.aspect_ratio;
< horiz_dielectric_constant = g_tp.wire_inside_mat.horiz_dielectric_constant;
< vert_dielectric_constant = g_tp.wire_inside_mat.vert_dielectric_constant;
< miller_value = g_tp.wire_inside_mat.miller_value;
< ild_thickness = g_tp.wire_inside_mat.ild_thickness;
< break;
< }
< default:
< {
< aspect_ratio = g_tp.wire_local.aspect_ratio;
< horiz_dielectric_constant = g_tp.wire_local.horiz_dielectric_constant;
< vert_dielectric_constant = g_tp.wire_local.vert_dielectric_constant;
< miller_value = g_tp.wire_local.miller_value;
< ild_thickness = g_tp.wire_local.ild_thickness;
< break;
< }
< }
---
> switch (wire_placement) {
> case outside_mat: {
> aspect_ratio = g_tp.wire_outside_mat.aspect_ratio;
> horiz_dielectric_constant = g_tp.wire_outside_mat.horiz_dielectric_constant;
> vert_dielectric_constant = g_tp.wire_outside_mat.vert_dielectric_constant;
> miller_value = g_tp.wire_outside_mat.miller_value;
> ild_thickness = g_tp.wire_outside_mat.ild_thickness;
> break;
> }
> case inside_mat : {
> aspect_ratio = g_tp.wire_inside_mat.aspect_ratio;
> horiz_dielectric_constant = g_tp.wire_inside_mat.horiz_dielectric_constant;
> vert_dielectric_constant = g_tp.wire_inside_mat.vert_dielectric_constant;
> miller_value = g_tp.wire_inside_mat.miller_value;
> ild_thickness = g_tp.wire_inside_mat.ild_thickness;
> break;
> }
> default: {
> aspect_ratio = g_tp.wire_local.aspect_ratio;
> horiz_dielectric_constant = g_tp.wire_local.horiz_dielectric_constant;
> vert_dielectric_constant = g_tp.wire_local.vert_dielectric_constant;
> miller_value = g_tp.wire_local.miller_value;
> ild_thickness = g_tp.wire_local.ild_thickness;
> break;
> }
> }
323,332c327,335
< if (call_from_outside)
< {
< wire_width *= 1e-6;
< wire_spacing *= 1e-6;
< }
< wire_height = wire_width/w_scale*aspect_ratio;
< /*
< * assuming height does not change. wire_width = width_original*w_scale
< * So wire_height does not change as wire width increases
< */
---
> if (call_from_outside) {
> wire_width *= 1e-6;
> wire_spacing *= 1e-6;
> }
> wire_height = wire_width / w_scale * aspect_ratio;
> /*
> * assuming height does not change. wire_width = width_original*w_scale
> * So wire_height does not change as wire width increases
> */
338,339c341,343
< sidewall = miller_value * horiz_dielectric_constant * (wire_height/wire_spacing)
< * epsilon0;
---
> sidewall = miller_value * horiz_dielectric_constant *
> (wire_height / wire_spacing)
> * epsilon0;
342,344c346,348
< // capacitance between wires in adjacent levels
< //adj = miller_value * vert_dielectric_constant *w_scale * epsilon0;
< //adj = 2*vert_dielectric_constant *wire_width/(ild_thickness*1e-6) * epsilon0;
---
> // capacitance between wires in adjacent levels
> //adj = miller_value * vert_dielectric_constant *w_scale * epsilon0;
> //adj = 2*vert_dielectric_constant *wire_width/(ild_thickness*1e-6) * epsilon0;
346,347c350,352
< adj = miller_value *vert_dielectric_constant *wire_width/(ild_thickness*1e-6) * epsilon0;
< //Change ild_thickness from micron to M
---
> adj = miller_value * vert_dielectric_constant * wire_width /
> (ild_thickness * 1e-6) * epsilon0;
> //Change ild_thickness from micron to M
349,350c354,355
< //tot_cap = (sidewall + adj + (deviceType->C_fringe * 1e6)); //F/m
< tot_cap = (sidewall + adj + (g_tp.fringe_cap * 1e6)); //F/m
---
> //tot_cap = (sidewall + adj + (deviceType->C_fringe * 1e6)); //F/m
> tot_cap = (sidewall + adj + (g_tp.fringe_cap * 1e6)); //F/m
352,357c357,361
< if (call_from_outside)
< {
< wire_width *= 1e6;
< wire_spacing *= 1e6;
< }
< return (tot_cap*len); // (F)
---
> if (call_from_outside) {
> wire_width *= 1e6;
> wire_spacing *= 1e6;
> }
> return (tot_cap*len); // (F)
361,363c365,366
< double
< Wire::wire_res (double len /*(in m)*/)
< {
---
> double
> Wire::wire_res (double len /*(in m)*/) {
365,367c368,373
< double aspect_ratio,alpha_scatter =1.05, dishing_thickness=0, barrier_thickness=0;
< //TODO: this should be consistent with the wire_res in technology file
< //The whole computation should be consistent with the wire_res in technology.cc too!
---
> double aspect_ratio;
> double alpha_scatter = 1.05;
> double dishing_thickness = 0;
> double barrier_thickness = 0;
> //TODO: this should be consistent with the wire_res in technology file
> //The whole computation should be consistent with the wire_res in technology.cc too!
369,388c375,392
< switch (wire_placement)
< {
< case outside_mat:
< {
< aspect_ratio = g_tp.wire_outside_mat.aspect_ratio;
< break;
< }
< case inside_mat :
< {
< aspect_ratio = g_tp.wire_inside_mat.aspect_ratio;
< break;
< }
< default:
< {
< aspect_ratio = g_tp.wire_local.aspect_ratio;
< break;
< }
< }
< return (alpha_scatter * resistivity * 1e-6 * len/((aspect_ratio*wire_width/w_scale-dishing_thickness - barrier_thickness)*
< (wire_width-2*barrier_thickness)));
---
> switch (wire_placement) {
> case outside_mat: {
> aspect_ratio = g_tp.wire_outside_mat.aspect_ratio;
> break;
> }
> case inside_mat : {
> aspect_ratio = g_tp.wire_inside_mat.aspect_ratio;
> break;
> }
> default: {
> aspect_ratio = g_tp.wire_local.aspect_ratio;
> break;
> }
> }
> return (alpha_scatter * resistivity * 1e-6 * len /
> ((aspect_ratio*wire_width / w_scale - dishing_thickness -
> barrier_thickness)*
> (wire_width - 2*barrier_thickness)));
398,402c402,405
< void
< Wire::low_swing_model()
< {
< double len = wire_length;
< double beta = pmos_to_nmos_sz_ratio();
---
> void
> Wire::low_swing_model() {
> double len = wire_length;
> double beta = pmos_to_nmos_sz_ratio();
405c408
< double inputrise = (in_rise_time == 0) ? signal_rise_time() : in_rise_time;
---
> double inputrise = (in_rise_time == 0) ? signal_rise_time() : in_rise_time;
407,419c410,422
< /* Final nmos low swing driver size calculation:
< * Try to size the driver such that the delay
< * is less than 8FO4.
< * If the driver size is greater than
< * the max allowable size, assume max size for the driver.
< * In either case, recalculate the delay using
< * the final driver size assuming slow input with
< * finite rise time instead of ideal step input
< *
< * (ref: Technical report 6)
< */
< double cwire = wire_cap(len); /* load capacitance */
< double rwire = wire_res(len);
---
> /* Final nmos low swing driver size calculation:
> * Try to size the driver such that the delay
> * is less than 8FO4.
> * If the driver size is greater than
> * the max allowable size, assume max size for the driver.
> * In either case, recalculate the delay using
> * the final driver size assuming slow input with
> * finite rise time instead of ideal step input
> *
> * (ref: Technical report 6)
> */
> double cwire = wire_cap(len); /* load capacitance */
> double rwire = wire_res(len);
423,424c426,427
< double driver_res = (-8*g_tp.FO4/(log(0.5) * cwire))/RES_ADJ;
< double nsize = R_to_w(driver_res, NCH);
---
> double driver_res = (-8 * g_tp.FO4 / (log(0.5) * cwire)) / RES_ADJ;
> double nsize = R_to_w(driver_res, NCH);
426,427c429,430
< nsize = MIN(nsize, g_tp.max_w_nmos_);
< nsize = MAX(nsize, g_tp.min_w_nmos_);
---
> nsize = MIN(nsize, g_tp.max_w_nmos_);
> nsize = MAX(nsize, g_tp.min_w_nmos_);
429,432c432,434
< if(rwire*cwire > 8*g_tp.FO4)
< {
< nsize = g_tp.max_w_nmos_;
< }
---
> if (rwire*cwire > 8*g_tp.FO4) {
> nsize = g_tp.max_w_nmos_;
> }
434,442c436,446
< // size the inverter appropriately to minimize the transmitter delay
< // Note - In order to minimize leakage, we are not adding a set of inverters to
< // bring down delay. Instead, we are sizing the single gate
< // based on the logical effort.
< double st_eff = sqrt((2+beta/1+beta)*gate_C(nsize, 0)/(gate_C(2*g_tp.min_w_nmos_, 0)
< + gate_C(2*min_w_pmos, 0)));
< double req_cin = ((2+beta/1+beta)*gate_C(nsize, 0))/st_eff;
< double inv_size = req_cin/(gate_C(min_w_pmos, 0) + gate_C(g_tp.min_w_nmos_, 0));
< inv_size = MAX(inv_size, 1);
---
> // size the inverter appropriately to minimize the transmitter delay
> // Note - In order to minimize leakage, we are not adding a set of inverters to
> // bring down delay. Instead, we are sizing the single gate
> // based on the logical effort.
> double st_eff = sqrt((2 + beta / 1 + beta) * gate_C(nsize, 0) /
> (gate_C(2 * g_tp.min_w_nmos_, 0)
> + gate_C(2 * min_w_pmos, 0)));
> double req_cin = ((2 + beta / 1 + beta) * gate_C(nsize, 0)) / st_eff;
> double inv_size = req_cin / (gate_C(min_w_pmos, 0) +
> gate_C(g_tp.min_w_nmos_, 0));
> inv_size = MAX(inv_size, 1);
444,449c448,453
< /* nand gate delay */
< double res_eq = (2 * tr_R_on(g_tp.min_w_nmos_, NCH, 1));
< double cap_eq = 2 * drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(2*g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< gate_C(inv_size*g_tp.min_w_nmos_, 0) +
< gate_C(inv_size*min_w_pmos, 0);
---
> /* nand gate delay */
> double res_eq = (2 * tr_R_on(g_tp.min_w_nmos_, NCH, 1));
> double cap_eq = 2 * drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(2 * g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> gate_C(inv_size * g_tp.min_w_nmos_, 0) +
> gate_C(inv_size * min_w_pmos, 0);
451c455
< double timeconst = res_eq * cap_eq;
---
> double timeconst = res_eq * cap_eq;
453,455c457,459
< delay = horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd,
< deviceType->Vth/deviceType->Vdd, RISE);
< double temp_power = cap_eq*deviceType->Vdd*deviceType->Vdd;
---
> delay = horowitz(inputrise, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, RISE);
> double temp_power = cap_eq * deviceType->Vdd * deviceType->Vdd;
457c461
< inputrise = delay / (deviceType->Vdd - deviceType->Vth); /* for the next stage */
---
> inputrise = delay / (deviceType->Vdd - deviceType->Vth); /* for the next stage */
459,468c463,472
< /* Inverter delay:
< * The load capacitance of this inv depends on
< * the gate capacitance of the final stage nmos
< * transistor which in turn depends on nsize
< */
< res_eq = tr_R_on(inv_size*min_w_pmos, PCH, 1);
< cap_eq = drain_C_(inv_size*min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(inv_size*g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
< gate_C(nsize, 0);
< timeconst = res_eq * cap_eq;
---
> /* Inverter delay:
> * The load capacitance of this inv depends on
> * the gate capacitance of the final stage nmos
> * transistor which in turn depends on nsize
> */
> res_eq = tr_R_on(inv_size * min_w_pmos, PCH, 1);
> cap_eq = drain_C_(inv_size * min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(inv_size * g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def) +
> gate_C(nsize, 0);
> timeconst = res_eq * cap_eq;
470,472c474,476
< delay += horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd,
< deviceType->Vth/deviceType->Vdd, FALL);
< temp_power += cap_eq*deviceType->Vdd*deviceType->Vdd;
---
> delay += horowitz(inputrise, timeconst, deviceType->Vth / deviceType->Vdd,
> deviceType->Vth / deviceType->Vdd, FALL);
> temp_power += cap_eq * deviceType->Vdd * deviceType->Vdd;
475,479c479,484
< transmitter.delay = delay;
< transmitter.power.readOp.dynamic = temp_power*2; /* since it is a diff. model*/
< transmitter.power.readOp.leakage = deviceType->Vdd *
< (4 * cmos_Isub_leakage(g_tp.min_w_nmos_, min_w_pmos, 2, nand) +
< 4 * cmos_Isub_leakage(g_tp.min_w_nmos_, min_w_pmos, 1, inv));
---
> transmitter.delay = delay;
> /* since it is a diff. model*/
> transmitter.power.readOp.dynamic = temp_power * 2;
> transmitter.power.readOp.leakage = deviceType->Vdd *
> (4 * cmos_Isub_leakage(g_tp.min_w_nmos_, min_w_pmos, 2, nand) +
> 4 * cmos_Isub_leakage(g_tp.min_w_nmos_, min_w_pmos, 1, inv));
481,483c486,488
< transmitter.power.readOp.gate_leakage = deviceType->Vdd *
< (4 * cmos_Ig_leakage(g_tp.min_w_nmos_, min_w_pmos, 2, nand) +
< 4 * cmos_Ig_leakage(g_tp.min_w_nmos_, min_w_pmos, 1, inv));
---
> transmitter.power.readOp.gate_leakage = deviceType->Vdd *
> (4 * cmos_Ig_leakage(g_tp.min_w_nmos_, min_w_pmos, 2, nand) +
> 4 * cmos_Ig_leakage(g_tp.min_w_nmos_, min_w_pmos, 1, inv));
485c490
< inputrise = delay / deviceType->Vth;
---
> inputrise = delay / deviceType->Vth;
487,500c492,505
< /* nmos delay + wire delay */
< cap_eq = cwire + drain_C_(nsize, NCH, 1, 1, g_tp.cell_h_def)*2 +
< nsense * sense_amp_input_cap(); //+receiver cap
< /*
< * NOTE: nmos is used as both pull up and pull down transistor
< * in the transmitter. This is because for low voltage swing, drive
< * resistance of nmos is less than pmos
< * (for a detailed graph ref: On-Chip Wires: Scaling and Efficiency)
< */
< timeconst = (tr_R_on(nsize, NCH, 1)*RES_ADJ) * (cwire +
< drain_C_(nsize, NCH, 1, 1, g_tp.cell_h_def)*2) +
< rwire*cwire/2 +
< (tr_R_on(nsize, NCH, 1)*RES_ADJ + rwire) *
< nsense * sense_amp_input_cap();
---
> /* nmos delay + wire delay */
> cap_eq = cwire + drain_C_(nsize, NCH, 1, 1, g_tp.cell_h_def) * 2 +
> nsense * sense_amp_input_cap(); //+receiver cap
> /*
> * NOTE: nmos is used as both pull up and pull down transistor
> * in the transmitter. This is because for low voltage swing, drive
> * resistance of nmos is less than pmos
> * (for a detailed graph ref: On-Chip Wires: Scaling and Efficiency)
> */
> timeconst = (tr_R_on(nsize, NCH, 1) * RES_ADJ) * (cwire +
> drain_C_(nsize, NCH, 1, 1, g_tp.cell_h_def) * 2) +
> rwire * cwire / 2 +
> (tr_R_on(nsize, NCH, 1) * RES_ADJ + rwire) *
> nsense * sense_amp_input_cap();
502,507c507,513
< /*
< * since we are pre-equalizing and overdriving the low
< * swing wires, the net time constant is less
< * than the actual value
< */
< delay += horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd, .25, 0);
---
> /*
> * since we are pre-equalizing and overdriving the low
> * swing wires, the net time constant is less
> * than the actual value
> */
> delay += horowitz(inputrise, timeconst, deviceType->Vth /
> deviceType->Vdd, .25, 0);
509,510c515,516
< temp_power += cap_eq*VOL_SWING*.400; /* .4v is the over drive voltage */
< temp_power *= 2; /* differential wire */
---
> temp_power += cap_eq * VOL_SWING * .400; /* .4v is the over drive voltage */
> temp_power *= 2; /* differential wire */
512,515c518,521
< l_wire.delay = delay - transmitter.delay;
< l_wire.power.readOp.dynamic = temp_power - transmitter.power.readOp.dynamic;
< l_wire.power.readOp.leakage = deviceType->Vdd*
< (4* cmos_Isub_leakage(nsize, 0, 1, nmos));
---
> l_wire.delay = delay - transmitter.delay;
> l_wire.power.readOp.dynamic = temp_power - transmitter.power.readOp.dynamic;
> l_wire.power.readOp.leakage = deviceType->Vdd *
> (4 * cmos_Isub_leakage(nsize, 0, 1, nmos));
517,518c523,524
< l_wire.power.readOp.gate_leakage = deviceType->Vdd*
< (4* cmos_Ig_leakage(nsize, 0, 1, nmos));
---
> l_wire.power.readOp.gate_leakage = deviceType->Vdd *
> (4 * cmos_Ig_leakage(nsize, 0, 1, nmos));
520,521c526,527
< //double rt = horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd,
< // deviceType->Vth/deviceType->Vdd, RISE)/deviceType->Vth;
---
> //double rt = horowitz(inputrise, timeconst, deviceType->Vth/deviceType->Vdd,
> // deviceType->Vth/deviceType->Vdd, RISE)/deviceType->Vth;
523c529
< delay += g_tp.sense_delay;
---
> delay += g_tp.sense_delay;
525,529c531,535
< sense_amp.delay = g_tp.sense_delay;
< out_rise_time = g_tp.sense_delay/(deviceType->Vth);
< sense_amp.power.readOp.dynamic = g_tp.sense_dy_power;
< sense_amp.power.readOp.leakage = 0; //FIXME
< sense_amp.power.readOp.gate_leakage = 0;
---
> sense_amp.delay = g_tp.sense_delay;
> out_rise_time = g_tp.sense_delay / (deviceType->Vth);
> sense_amp.power.readOp.dynamic = g_tp.sense_dy_power;
> sense_amp.power.readOp.leakage = 0; //FIXME
> sense_amp.power.readOp.gate_leakage = 0;
531,537c537,543
< power.readOp.dynamic = temp_power + sense_amp.power.readOp.dynamic;
< power.readOp.leakage = transmitter.power.readOp.leakage +
< l_wire.power.readOp.leakage +
< sense_amp.power.readOp.leakage;
< power.readOp.gate_leakage = transmitter.power.readOp.gate_leakage +
< l_wire.power.readOp.gate_leakage +
< sense_amp.power.readOp.gate_leakage;
---
> power.readOp.dynamic = temp_power + sense_amp.power.readOp.dynamic;
> power.readOp.leakage = transmitter.power.readOp.leakage +
> l_wire.power.readOp.leakage +
> sense_amp.power.readOp.leakage;
> power.readOp.gate_leakage = transmitter.power.readOp.gate_leakage +
> l_wire.power.readOp.gate_leakage +
> sense_amp.power.readOp.gate_leakage;
540,546c546,551
< double
< Wire::sense_amp_input_cap()
< {
< return drain_C_(g_tp.w_iso, PCH, 1, 1, g_tp.cell_h_def) +
< gate_C(g_tp.w_sense_en + g_tp.w_sense_n, 0) +
< drain_C_(g_tp.w_sense_n, NCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(g_tp.w_sense_p, PCH, 1, 1, g_tp.cell_h_def);
---
> double
> Wire::sense_amp_input_cap() {
> return drain_C_(g_tp.w_iso, PCH, 1, 1, g_tp.cell_h_def) +
> gate_C(g_tp.w_sense_en + g_tp.w_sense_n, 0) +
> drain_C_(g_tp.w_sense_n, NCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(g_tp.w_sense_p, PCH, 1, 1, g_tp.cell_h_def);
550,559c555,563
< void Wire::delay_optimal_wire ()
< {
< double len = wire_length;
< //double min_wire_width = wire_width; //m
< double beta = pmos_to_nmos_sz_ratio();
< double switching = 0; // switching energy
< double short_ckt = 0; // short-circuit energy
< double tc = 0; // time constant
< // input cap of min sized driver
< double input_cap = gate_C(g_tp.min_w_nmos_ + min_w_pmos, 0);
---
> void Wire::delay_optimal_wire () {
> double len = wire_length;
> //double min_wire_width = wire_width; //m
> double beta = pmos_to_nmos_sz_ratio();
> double switching = 0; // switching energy
> double short_ckt = 0; // short-circuit energy
> double tc = 0; // time constant
> // input cap of min sized driver
> double input_cap = gate_C(g_tp.min_w_nmos_ + min_w_pmos, 0);
561,568c565,572
< // output parasitic capacitance of
< // the min. sized driver
< double out_cap = drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def);
< // drive resistance
< double out_res = (tr_R_on(g_tp.min_w_nmos_, NCH, 1) +
< tr_R_on(min_w_pmos, PCH, 1))/2;
< double wr = wire_res(len); //ohm
---
> // output parasitic capacitance of
> // the min. sized driver
> double out_cap = drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def);
> // drive resistance
> double out_res = (tr_R_on(g_tp.min_w_nmos_, NCH, 1) +
> tr_R_on(min_w_pmos, PCH, 1)) / 2;
> double wr = wire_res(len); //ohm
570,571c574,575
< // wire cap /m
< double wc = wire_cap(len);
---
> // wire cap /m
> double wc = wire_cap(len);
573,574c577,579
< // size the repeater such that the delay of the wire is minimum
< double repeater_scaling = sqrt(out_res*wc/(wr*input_cap)); // len will cancel
---
> // size the repeater such that the delay of the wire is minimum
> // len will cancel
> double repeater_scaling = sqrt(out_res * wc / (wr * input_cap));
576c581
< // calc the optimum spacing between the repeaters (m)
---
> // calc the optimum spacing between the repeaters (m)
578,580c583,585
< repeater_spacing = sqrt(2 * out_res * (out_cap + input_cap)/
< ((wr/len)*(wc/len)));
< repeater_size = repeater_scaling;
---
> repeater_spacing = sqrt(2 * out_res * (out_cap + input_cap) /
> ((wr / len) * (wc / len)));
> repeater_size = repeater_scaling;
582,583c587,589
< switching = (repeater_scaling * (input_cap + out_cap) +
< repeater_spacing * (wc/len)) * deviceType->Vdd * deviceType->Vdd;
---
> switching = (repeater_scaling * (input_cap + out_cap) +
> repeater_spacing * (wc / len)) * deviceType->Vdd *
> deviceType->Vdd;
585,588c591,594
< tc = out_res * (input_cap + out_cap) +
< out_res * wc/len * repeater_spacing/repeater_scaling +
< wr/len * repeater_spacing * input_cap * repeater_scaling +
< 0.5 * (wr/len) * (wc/len)* repeater_spacing * repeater_spacing;
---
> tc = out_res * (input_cap + out_cap) +
> out_res * wc / len * repeater_spacing / repeater_scaling +
> wr / len * repeater_spacing * input_cap * repeater_scaling +
> 0.5 * (wr / len) * (wc / len) * repeater_spacing * repeater_spacing;
590c596
< delay = 0.693 * tc * len/repeater_spacing;
---
> delay = 0.693 * tc * len / repeater_spacing;
593,594c599,600
< short_ckt = deviceType->Vdd * g_tp.min_w_nmos_ * Ishort_ckt * 1.0986 *
< repeater_scaling * tc;
---
> short_ckt = deviceType->Vdd * g_tp.min_w_nmos_ * Ishort_ckt * 1.0986 *
> repeater_scaling * tc;
596,605c602,618
< area.set_area((len/repeater_spacing) *
< compute_gate_area(INV, 1, min_w_pmos * repeater_scaling,
< g_tp.min_w_nmos_ * repeater_scaling, g_tp.cell_h_def));
< power.readOp.dynamic = ((len/repeater_spacing)*(switching + short_ckt));
< power.readOp.leakage = ((len/repeater_spacing)*
< deviceType->Vdd*
< cmos_Isub_leakage(g_tp.min_w_nmos_*repeater_scaling, beta*g_tp.min_w_nmos_*repeater_scaling, 1, inv));
< power.readOp.gate_leakage = ((len/repeater_spacing)*
< deviceType->Vdd*
< cmos_Ig_leakage(g_tp.min_w_nmos_*repeater_scaling, beta*g_tp.min_w_nmos_*repeater_scaling, 1, inv));
---
> area.set_area((len / repeater_spacing) *
> compute_gate_area(INV, 1, min_w_pmos * repeater_scaling,
> g_tp.min_w_nmos_ * repeater_scaling,
> g_tp.cell_h_def));
> power.readOp.dynamic = ((len / repeater_spacing) * (switching + short_ckt));
> power.readOp.leakage = ((len / repeater_spacing) *
> deviceType->Vdd *
> cmos_Isub_leakage(g_tp.min_w_nmos_ *
> repeater_scaling, beta *
> g_tp.min_w_nmos_ *
> repeater_scaling, 1, inv));
> power.readOp.gate_leakage = ((len / repeater_spacing) *
> deviceType->Vdd *
> cmos_Ig_leakage(g_tp.min_w_nmos_ *
> repeater_scaling, beta *
> g_tp.min_w_nmos_ *
> repeater_scaling, 1, inv));
612,614c625,627
< Wire::init_wire(){
< wire_length = 1;
< delay_optimal_wire();
---
> Wire::init_wire() {
> wire_length = 1;
> delay_optimal_wire();
616,619c629,632
< powerDef pow;
< si = repeater_size;
< sp = repeater_spacing;
< sp *= 1e6; // in microns
---
> powerDef pow;
> si = repeater_size;
> sp = repeater_spacing;
> sp *= 1e6; // in microns
621,631c634,644
< double i, j, del;
< repeated_wire.push_back(Component());
< for (j=sp; j < 4*sp; j+=100) {
< for (i = si; i > 1; i--) {
< pow = wire_model(j*1e-6, i, &del);
< if (j == sp && i == si) {
< global.delay = del;
< global.power = pow;
< global.area.h = si;
< global.area.w = sp*1e-6; // m
< }
---
> double i, j, del;
> repeated_wire.push_back(Component());
> for (j = sp; j < 4*sp; j += 100) {
> for (i = si; i > 1; i--) {
> pow = wire_model(j * 1e-6, i, &del);
> if (j == sp && i == si) {
> global.delay = del;
> global.power = pow;
> global.area.h = si;
> global.area.w = sp * 1e-6; // m
> }
637,641c650,654
< repeated_wire.back().delay = del;
< repeated_wire.back().power.readOp = pow.readOp;
< repeated_wire.back().area.w = j*1e-6; //m
< repeated_wire.back().area.h = i;
< repeated_wire.push_back(Component());
---
> repeated_wire.back().delay = del;
> repeated_wire.back().power.readOp = pow.readOp;
> repeated_wire.back().area.w = j * 1e-6; //m
> repeated_wire.back().area.h = i;
> repeated_wire.push_back(Component());
642a656
> }
644,650c658,663
< }
< repeated_wire.pop_back();
< update_fullswing();
< Wire *l_wire = new Wire(Low_swing, 0.001/* 1 mm*/, 1);
< low_swing.delay = l_wire->delay;
< low_swing.power = l_wire->power;
< delete l_wire;
---
> repeated_wire.pop_back();
> update_fullswing();
> Wire *l_wire = new Wire(Low_swing, 0.001/* 1 mm*/, 1);
> low_swing.delay = l_wire->delay;
> low_swing.power = l_wire->power;
> delete l_wire;
655,656c668
< void Wire::update_fullswing()
< {
---
> void Wire::update_fullswing() {
658,702c670,712
< list<Component>::iterator citer;
< double del[4];
< del[3] = this->global.delay + this->global.delay*.3;
< del[2] = global.delay + global.delay*.2;
< del[1] = global.delay + global.delay*.1;
< del[0] = global.delay + global.delay*.05;
< double threshold;
< double ncost;
< double cost;
< int i = 4;
< while (i>0) {
< threshold = del[i-1];
< cost = BIGNUM;
< for (citer = repeated_wire.begin(); citer != repeated_wire.end(); citer++)
< {
< if (citer->delay > threshold) {
< citer = repeated_wire.erase(citer);
< citer --;
< }
< else {
< ncost = citer->power.readOp.dynamic/global.power.readOp.dynamic +
< citer->power.readOp.leakage/global.power.readOp.leakage;
< if(ncost < cost)
< {
< cost = ncost;
< if (i == 4) {
< global_30.delay = citer->delay;
< global_30.power = citer->power;
< global_30.area = citer->area;
< }
< else if (i==3) {
< global_20.delay = citer->delay;
< global_20.power = citer->power;
< global_20.area = citer->area;
< }
< else if(i==2) {
< global_10.delay = citer->delay;
< global_10.power = citer->power;
< global_10.area = citer->area;
< }
< else if(i==1) {
< global_5.delay = citer->delay;
< global_5.power = citer->power;
< global_5.area = citer->area;
< }
---
> list<Component>::iterator citer;
> double del[4];
> del[3] = this->global.delay + this->global.delay * .3;
> del[2] = global.delay + global.delay * .2;
> del[1] = global.delay + global.delay * .1;
> del[0] = global.delay + global.delay * .05;
> double threshold;
> double ncost;
> double cost;
> int i = 4;
> while (i > 0) {
> threshold = del[i-1];
> cost = BIGNUM;
> for (citer = repeated_wire.begin(); citer != repeated_wire.end();
> citer++) {
> if (citer->delay > threshold) {
> citer = repeated_wire.erase(citer);
> citer --;
> } else {
> ncost = citer->power.readOp.dynamic /
> global.power.readOp.dynamic +
> citer->power.readOp.leakage / global.power.readOp.leakage;
> if (ncost < cost) {
> cost = ncost;
> if (i == 4) {
> global_30.delay = citer->delay;
> global_30.power = citer->power;
> global_30.area = citer->area;
> } else if (i == 3) {
> global_20.delay = citer->delay;
> global_20.power = citer->power;
> global_20.area = citer->area;
> } else if (i == 2) {
> global_10.delay = citer->delay;
> global_10.power = citer->power;
> global_10.area = citer->area;
> } else if (i == 1) {
> global_5.delay = citer->delay;
> global_5.power = citer->power;
> global_5.area = citer->area;
> }
> }
> }
704c714
< }
---
> i--;
706,707d715
< i--;
< }
712,726c720,733
< powerDef Wire::wire_model (double space, double size, double *delay)
< {
< powerDef ptemp;
< double len = 1;
< //double min_wire_width = wire_width; //m
< double beta = pmos_to_nmos_sz_ratio();
< // switching energy
< double switching = 0;
< // short-circuit energy
< double short_ckt = 0;
< // time constant
< double tc = 0;
< // input cap of min sized driver
< double input_cap = gate_C (g_tp.min_w_nmos_ +
< min_w_pmos, 0);
---
> powerDef Wire::wire_model (double space, double size, double *delay) {
> powerDef ptemp;
> double len = 1;
> //double min_wire_width = wire_width; //m
> double beta = pmos_to_nmos_sz_ratio();
> // switching energy
> double switching = 0;
> // short-circuit energy
> double short_ckt = 0;
> // time constant
> double tc = 0;
> // input cap of min sized driver
> double input_cap = gate_C (g_tp.min_w_nmos_ +
> min_w_pmos, 0);
728,735c735,742
< // output parasitic capacitance of
< // the min. sized driver
< double out_cap = drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
< drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def);
< // drive resistance
< double out_res = (tr_R_on(g_tp.min_w_nmos_, NCH, 1) +
< tr_R_on(min_w_pmos, PCH, 1))/2;
< double wr = wire_res(len); //ohm
---
> // output parasitic capacitance of
> // the min. sized driver
> double out_cap = drain_C_(min_w_pmos, PCH, 1, 1, g_tp.cell_h_def) +
> drain_C_(g_tp.min_w_nmos_, NCH, 1, 1, g_tp.cell_h_def);
> // drive resistance
> double out_res = (tr_R_on(g_tp.min_w_nmos_, NCH, 1) +
> tr_R_on(min_w_pmos, PCH, 1)) / 2;
> double wr = wire_res(len); //ohm
737,738c744,745
< // wire cap /m
< double wc = wire_cap(len);
---
> // wire cap /m
> double wc = wire_cap(len);
740,741c747,748
< repeater_spacing = space;
< repeater_size = size;
---
> repeater_spacing = space;
> repeater_size = size;
743,744c750,752
< switching = (repeater_size * (input_cap + out_cap) +
< repeater_spacing * (wc/len)) * deviceType->Vdd * deviceType->Vdd;
---
> switching = (repeater_size * (input_cap + out_cap) +
> repeater_spacing * (wc / len)) * deviceType->Vdd *
> deviceType->Vdd;
746,749c754,757
< tc = out_res * (input_cap + out_cap) +
< out_res * wc/len * repeater_spacing/repeater_size +
< wr/len * repeater_spacing * out_cap * repeater_size +
< 0.5 * (wr/len) * (wc/len)* repeater_spacing * repeater_spacing;
---
> tc = out_res * (input_cap + out_cap) +
> out_res * wc / len * repeater_spacing / repeater_size +
> wr / len * repeater_spacing * out_cap * repeater_size +
> 0.5 * (wr / len) * (wc / len) * repeater_spacing * repeater_spacing;
751c759
< *delay = 0.693 * tc * len/repeater_spacing;
---
> *delay = 0.693 * tc * len / repeater_spacing;
754,755c762,763
< short_ckt = deviceType->Vdd * g_tp.min_w_nmos_ * Ishort_ckt * 1.0986 *
< repeater_size * tc;
---
> short_ckt = deviceType->Vdd * g_tp.min_w_nmos_ * Ishort_ckt * 1.0986 *
> repeater_size * tc;
757,760c765,771
< ptemp.readOp.dynamic = ((len/repeater_spacing)*(switching + short_ckt));
< ptemp.readOp.leakage = ((len/repeater_spacing)*
< deviceType->Vdd*
< cmos_Isub_leakage(g_tp.min_w_nmos_*repeater_size, beta*g_tp.min_w_nmos_*repeater_size, 1, inv));
---
> ptemp.readOp.dynamic = ((len / repeater_spacing) * (switching + short_ckt));
> ptemp.readOp.leakage = ((len / repeater_spacing) *
> deviceType->Vdd *
> cmos_Isub_leakage(g_tp.min_w_nmos_ *
> repeater_size, beta *
> g_tp.min_w_nmos_ *
> repeater_size, 1, inv));
762,764c773,778
< ptemp.readOp.gate_leakage = ((len/repeater_spacing)*
< deviceType->Vdd*
< cmos_Ig_leakage(g_tp.min_w_nmos_*repeater_size, beta*g_tp.min_w_nmos_*repeater_size, 1, inv));
---
> ptemp.readOp.gate_leakage = ((len / repeater_spacing) *
> deviceType->Vdd *
> cmos_Ig_leakage(g_tp.min_w_nmos_ *
> repeater_size, beta *
> g_tp.min_w_nmos_ *
> repeater_size, 1, inv));
766c780
< return ptemp;
---
> return ptemp;
770,771c784
< Wire::print_wire()
< {
---
> Wire::print_wire() {
773,782c786,796
< cout << "\nWire Properties:\n\n";
< cout << " Delay Optimal\n\tRepeater size - "<< global.area.h <<
< " \n\tRepeater spacing - " << global.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global.delay*1e6 << " (ns/mm)"
< " \n\tPowerD - " << global.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
---
> cout << "\nWire Properties:\n\n";
> cout << " Delay Optimal\n\tRepeater size - " << global.area.h <<
> " \n\tRepeater spacing - " << global.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global.delay*1e6 << " (ns/mm)"
> " \n\tPowerD - " << global.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
784,829c798,851
< cout << " 5% Overhead\n\tRepeater size - "<< global_5.area.h <<
< " \n\tRepeater spacing - " << global_5.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global_5.delay *1e6<< " (ns/mm)"
< " \n\tPowerD - " << global_5.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global_5.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global_5.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
< cout << " 10% Overhead\n\tRepeater size - "<< global_10.area.h <<
< " \n\tRepeater spacing - " << global_10.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global_10.delay *1e6<< " (ns/mm)"
< " \n\tPowerD - " << global_10.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global_10.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global_10.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
< cout << " 20% Overhead\n\tRepeater size - "<< global_20.area.h <<
< " \n\tRepeater spacing - " << global_20.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global_20.delay *1e6<< " (ns/mm)"
< " \n\tPowerD - " << global_20.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global_20.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global_20.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
< cout << " 30% Overhead\n\tRepeater size - "<< global_30.area.h <<
< " \n\tRepeater spacing - " << global_30.area.w*1e3 << " (mm)"
< " \n\tDelay - " << global_30.delay *1e6<< " (ns/mm)"
< " \n\tPowerD - " << global_30.power.readOp.dynamic *1e6<< " (nJ/mm)"
< " \n\tPowerL - " << global_30.power.readOp.leakage << " (mW/mm)"
< " \n\tPowerLgate - " << global_30.power.readOp.gate_leakage << " (mW/mm)\n";
< cout << "\tWire width - " <<wire_width_init*1e6 << " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init*1e6 << " microns\n";
< cout <<endl;
< cout << " Low-swing wire (1 mm) - Note: Unlike repeated wires, \n\tdelay and power "
< "values of low-swing wires do not\n\thave a linear relationship with length." <<
< " \n\tdelay - " << low_swing.delay *1e9<< " (ns)"
< " \n\tpowerD - " << low_swing.power.readOp.dynamic *1e9<< " (nJ)"
< " \n\tPowerL - " << low_swing.power.readOp.leakage << " (mW)"
< " \n\tPowerLgate - " << low_swing.power.readOp.gate_leakage << " (mW)\n";
< cout << "\tWire width - " <<wire_width_init * 2 /* differential */<< " microns\n";
< cout << "\tWire spacing - " <<wire_spacing_init * 2 /* differential */<< " microns\n";
< cout <<endl;
< cout <<endl;
---
> cout << " 5% Overhead\n\tRepeater size - " << global_5.area.h <<
> " \n\tRepeater spacing - " << global_5.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global_5.delay *1e6 << " (ns/mm)"
> " \n\tPowerD - " << global_5.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global_5.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global_5.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
> cout << " 10% Overhead\n\tRepeater size - " << global_10.area.h <<
> " \n\tRepeater spacing - " << global_10.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global_10.delay *1e6 << " (ns/mm)"
> " \n\tPowerD - " << global_10.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global_10.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global_10.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
> cout << " 20% Overhead\n\tRepeater size - " << global_20.area.h <<
> " \n\tRepeater spacing - " << global_20.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global_20.delay *1e6 << " (ns/mm)"
> " \n\tPowerD - " << global_20.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global_20.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global_20.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
> cout << " 30% Overhead\n\tRepeater size - " << global_30.area.h <<
> " \n\tRepeater spacing - " << global_30.area.w*1e3 << " (mm)"
> " \n\tDelay - " << global_30.delay *1e6 << " (ns/mm)"
> " \n\tPowerD - " << global_30.power.readOp.dynamic *1e6 << " (nJ/mm)"
> " \n\tPowerL - " << global_30.power.readOp.leakage << " (mW/mm)"
> " \n\tPowerLgate - " << global_30.power.readOp.gate_leakage <<
> " (mW/mm)\n";
> cout << "\tWire width - " << wire_width_init*1e6 << " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init*1e6 << " microns\n";
> cout << endl;
> cout << " Low-swing wire (1 mm) - Note: Unlike repeated wires, \n\t" <<
> "delay and power values of low-swing wires do not\n\t" <<
> "have a linear relationship with length." <<
> " \n\tdelay - " << low_swing.delay *1e9 << " (ns)"
> " \n\tpowerD - " << low_swing.power.readOp.dynamic *1e9 << " (nJ)"
> " \n\tPowerL - " << low_swing.power.readOp.leakage << " (mW)"
> " \n\tPowerLgate - " << low_swing.power.readOp.gate_leakage <<
> " (mW)\n";
> cout << "\tWire width - " << wire_width_init * 2 /* differential */ <<
> " microns\n";
> cout << "\tWire spacing - " << wire_spacing_init * 2 /* differential */ <<
> " microns\n";
> cout << endl;
> cout << endl;