Lines Matching refs:cell

54       cell(subarray.cell), cam_cell(subarray.cam_cell),
69 camFlag = (is_fa || pure_cam);//although cam_cell.w = cell.w for fa, we still differentiate them.
108 R_wire_wl_drv_out = subarray.num_cols * cell.w * g_tp.wire_local.R_per_um;
110 R_wire_wl_drv_out = (subarray.num_cols_fa_cam * cam_cell.w + subarray.num_cols_fa_ram * cell.w) * g_tp.wire_local.R_per_um ;
115 double R_wire_bit_mux_dec_out = num_subarrays_per_row * subarray.num_cols * g_tp.wire_inside_mat.R_per_um * cell.w;//TODO:revisit for FA
116 double R_wire_sa_mux_dec_out = num_subarrays_per_row * subarray.num_cols * g_tp.wire_inside_mat.R_per_um * cell.w;
121 gate_C(g_tp.w_nmos_b_mux, 0, is_dram) + // 2 transistor per cell
123 g_tp.wire_inside_mat.C_per_um * cell.get_w();
131 g_tp.wire_inside_mat.C_per_um * cell.get_w();
139 g_tp.wire_inside_mat.C_per_um * cell.get_w();
157 camFlag ? cam_cell : cell);
170 camFlag ? cam_cell : cell);
179 camFlag ? cam_cell : cell);
188 camFlag ? cam_cell : cell);
195 C_wire_predec_blk_out = num_subarrays_per_row * subarray.num_rows * g_tp.wire_inside_mat.C_per_um * cell.h;
196 R_wire_predec_blk_out = num_subarrays_per_row * subarray.num_rows * g_tp.wire_inside_mat.R_per_um * cell.h;
275 driver_c_wire_load = subarray.num_cols_fa_ram * cell.w *
277 driver_r_wire_load = subarray.num_cols_fa_ram * cell.w *
289 driver_c_wire_load = subarray.num_cols * cell.w * g_tp.wire_outside_mat.C_per_um;
290 driver_r_wire_load = subarray.num_cols * cell.w * g_tp.wire_outside_mat.R_per_um;
490 cell.h, is_dram, false, true) +
491 drain_C_(ml_to_ram_wl_drv->width_n[k], NCH, 1, 1, 4 * cell.h,
540 // TODO: this 4*cell.h number must be revisited
542 cell.h, is_dram, false, true) +
543 drain_C_(row_dec->w_dec_n[k], NCH, 1, 1, 4 * cell.h, is_dram,
550 double r_b_metal = cell.h * g_tp.wire_local.R_per_um;
603 cell.w / (2 * (RWP + ERP + SCHP))) +
607 cell.w / (RWP + ERP + SCHP));
613 cell.w / (2 * (RWP + ERP)));
617 height += height_sense_amplifier(/*camFlag? sram_cell.w:*/cell.w * deg_bl_muxing / (RWP + ERP)); // sense_amp_height
621 g_tp.w_nmos_sa_mux, cell.w * dp.Ndsam_lev_1 / (RWP + ERP)); // sense_amp_mux_height
627 g_tp.w_nmos_sa_mux, cell.w * deg_bl_muxing * dp.Ndsam_lev_1 / (RWP + ERP)); // sense_amp_mux_height
632 pmos_to_nmos_sz_ratio(is_dram) * g_tp.min_w_nmos_, cell.w * dp.Ndsam_lev_2 / (RWP + ERP));
633 height += 2 * compute_tr_width_after_folding(g_tp.min_w_nmos_, cell.w * dp.Ndsam_lev_2 / (RWP + ERP));
642 cell.w *
1020 // calculate resistance of SRAM cell pull-up PMOS transistor
1021 // cam and sram have same cell trasistor properties
1050 double R_b_metal = camFlag ? cam_cell.h : cell.h * g_tp.wire_local.R_per_um;
1077 //Leakage current of an SRAM cell
1085 true) * 2;//two invs per cell
1105 camFlag ? cam_cell.w : cell.w /
1110 cell.w * deg_bl_muxing /
1116 cell.w * deg_bl_muxing / (RWP + ERP + SCHP), is_dram) +
1118 cell.w * deg_bl_muxing / (RWP + ERP + SCHP), is_dram);
1121 cell.w * deg_bl_muxing /
1244 camFlag ? cam_cell.w : cell.w * deg_bl_muxing /
1247 cam_cell.w : cell.w * deg_bl_muxing / (RWP + ERP + SCHP),
1250 cam_cell.w : cell.w * deg_bl_muxing / (RWP + ERP + SCHP),
1253 cam_cell.w : cell.w * deg_bl_muxing / (RWP + ERP + SCHP),
1274 camFlag ? cam_cell.w : cell.w *
1310 cam_cell.w : cell.w * deg_bl_muxing * dp.Ndsam_lev_1 /
1329 cell.w * deg_bl_muxing * dp.Ndsam_lev_1 / (RWP + ERP + SCHP),